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首页> 外文期刊>Journal of instrumentation: an IOP and SISSA journal >CLARO-CMOS: a fast, low power and radiation-hard front-end ASIC for single-photon counting in 0.35micron CMOS technology
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CLARO-CMOS: a fast, low power and radiation-hard front-end ASIC for single-photon counting in 0.35micron CMOS technology

机译：CLARO-CMOS：一种快速，低功耗，抗辐射能力强的前端ASIC，用于采用0.35微米CMOS技术的单光子计数

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摘要

The CLARO-CMOS is a prototype ASIC designed for fast photon counting with multi-anode photomultiplier tubes (MaPMT). The CLARO features a 5 ns peaking time, a recovery time to baseline smaller than 25 ns, and a power consumption of less than 1 mW per channel. The chip was designed in 0.35 mm CMOS technology, and was tested for radiation hardness with neutrons up to 1014 1 MeV neq/cm~2, X-rays up to 40 kGy and protons up to 76 kGy. Its capability to read out single photons at high rate from a Hamamatsu R11265 MaPMT, the baseline photon detector for the LHCb RICH upgrade, was demonstrated both with test bench measurements and with actual signals from a R11265 MaPMT. The presented results allowed CLARO to be chosen as the front-end readout chip in the upgraded LHCb RICH detector.
机译：CLARO-CMOS是ASIC原型，旨在通过多阳极光电倍增管（MaPMT）进行快速光子计数。 CLARO的峰值时间为5 ns，基线恢复时间小于25 ns，每通道功耗小于1 mW。该芯片采用0.35 mm CMOS技术设计，并经过了高达1014 1 MeV neq / cm〜2的中子，高达40 kGy的X射线和高达76 kGy的质子的辐射硬度测试。通过测试台测量和R11265 MaPMT的实际信号，证明了其可以从Hamamatsu R11265 MaPMT（用于LHCb RICH升级的基线光子检测器）中以高速率读出单光子的能力。呈现的结果使CLARO被选作升级的LHCb RICH检测器中的前端读出芯片。

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