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首页> 外文期刊>Journal of Materials Science >Study of defect states in a-Se85Te15-xPbx thin films by space charge limited conduction mechanism
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Study of defect states in a-Se85Te15-xPbx thin films by space charge limited conduction mechanism

机译:通过空间电荷限制传导机制研究a-Se85Te15-xPbx薄膜中的缺陷状态

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Current-Voltage (I-V) characteristics have been studied at various temperatures in vacuum evaporated thin films of a-Se85Te15-xPbx (x = 0, 2, 4, 6) alloys. These characteristics show that, at low electric fields, an ohmic behaviour is observed. However, at high electric fields (E similar to 10(4) V/cm), the current becomes superohmic. At high fields, in case of samples having 0 and 2 at% of Pb, the experimental data fits well with the theory of space charge limited conduction (SCLC) in case of uniform distribution of localized states in the mobility gap. Such type of behaviour is not observed at higher concentration of Pb in the present glassy system due to high conductivity. In these samples, joule heating due to large currents may prohibit the measurement of SCLC. Using the theory of SCLC for the uniform distribution of the traps, the density of localized defect states near Fermi level is calculated for these compositions. The results indicate that the density of defect states near Fermi level increases on addition of Pb to binary Se(85)Te(15)alloy. This is explained in terms of electronegativity of Pb as compared to host elements.
机译:在a-Se85Te15-xPbx(x = 0、2、4、6)合金的真空蒸发薄膜中,已研究了在各种温度下的电流-电压(I-V)特性。这些特征表明,在低电场下,观察到欧姆行为。但是,在高电场(E类似于10(4)V / cm)下,电流变为超欧姆。在高磁场下,如果样品的Pb含量为0和2 at%,则在迁移率间隙中局部态均匀分布的情况下,实验数据与空间电荷限制传导(SCLC)理论非常吻合。由于高电导率,在当前玻璃态系统中,在较高的Pb浓度下未观察到此类行为。在这些样品中,由于大电流而产生的焦耳热可能会阻止SCLC的测量。使用SCLC理论对陷阱进行均匀分布,可以为这些成分计算出接近费米能级的局部缺陷状态的密度。结果表明,当向二元Se(85)Te(15)合金中添加Pb时,缺陷状态的密度在费米能级附近增加。这是根据与主体元素相比Pb的电负性来解释的。

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