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Fabrication and optical property of single-crystalline InSb nanowire arrays

机译:单晶InSb纳米线阵列的制备和光学性质

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Semiconductor InSb nanowire arrays have been synthesized by the pulsed electrochemical deposition from citric acid aqueous solution into anodic alumina membranes. It was found that the InSb nanowires are of zinc-blende structure, and high filling rate and single-crystalline InSb nanowire array with right stoichiometric composition can be fabricated by proper controlling of the concentration of In and Sb ions and the PH value in the electrolyte and the pulse voltage, and the nanowires have [100] orientation with structure defects such as twins. The optical band gap has a strong blue shift with decreasing the diameter of the nanowire due to the quantum confinement effect.
机译:半导体InSb纳米线阵列已通过从柠檬酸水溶液到阳极氧化铝膜的脉冲电化学沉积法合成。发现InSb纳米线为闪锌矿结构,通过适当控制In和Sb离子的浓度以及电解液中的PH值,​​可以制备出填充率高,化学计量正确的单晶InSb纳米线阵列。和脉冲电压,纳米线具有[100]取向,并具有结构缺陷,例如孪晶。由于量子限制效应,随着纳​​米线直径的减小,光学带隙具有强烈的蓝移。

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