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首页> 外文期刊>Journal of Low Power Electronics >Selective Algorithms for Built-In Self-Test and Self-Diagnosis in Embedded SRAMS
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Selective Algorithms for Built-In Self-Test and Self-Diagnosis in Embedded SRAMS

机译：嵌入式SRAMS中内置自检和自诊断的选择性算法

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摘要

Memories are one of the most universal cores that are embedded into almost all system on chips (SoCs). Finding cost effective test solution for embedded memories is paramount. Industries are still improving the existing low cost memory test solutions which can support current technologies and advanced SoC architectures. This paper presents a programmable built-in self-diagnosis (PBISD) methodology with self-test for embedded SRAMs. The BISD logic adapts the test controller with micro code encoding technique in order to control the test operation sequences for fault detection. It also encompasses a diagnosis array in order to locate the fault sites. The macro codes are used to select any of seven MARCH algorithms, and detect different faults of the memory under test (MUT). This BISD supports the test, diagnosis and normal operation modes. The experimental results show that this work gives 17-47% improved area overhead and 16-41% enhanced speed compared to three published results.
机译：内存是嵌入几乎所有片上系统（SoC）的最通用的内核之一。寻找嵌入式存储器的具有成本效益的测试解决方案至关重要。工业界仍在改进现有的低成本存储器测试解决方案，以支持当前的技术和先进的SoC架构。本文介绍了一种针对嵌入式SRAM的具有自检功能的可编程内置自诊断（PBISD）方法。 BISD逻辑使测试控制器具有微码编码技术，以便控制测试操作序列以进行故障检测。它还包含一个诊断阵列，以便定位故障点。宏代码用于选择七种MARCH算法中的任何一种，并检测被测存储器（MUT）的不同故障。该BISD支持测试，诊断和正常操作模式。实验结果表明，与三篇已发表的结果相比，这项工作使面积开销提高了17-47％，速度提高了16-41％。

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