Determination of Electron and Hole Mobility of Regioregular Poly(3-hexylthiophene) by the Time of Flight Method

Ke Yang; Yanping Wang; Aloke Jain; Lynne Samulson; Jayant Kumar

首页> 外文期刊>Journal of Macromolecular Science. Pure and Applied Chemistry >Determination of Electron and Hole Mobility of Regioregular Poly(3-hexylthiophene) by the Time of Flight Method

【24h】

Determination of Electron and Hole Mobility of Regioregular Poly(3-hexylthiophene) by the Time of Flight Method

机译：飞行时间法测定区域规则聚（3-己基噻吩）的电子和空穴迁移率

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Time of flight method (TOF) is used to measure the electron and hole mobility of a spin coated regioregular poly(3-hexylthiophene) (P3HT) film. We find that both electron and hole have the same mobility (about 3.83.9×10-4 cm2/Vs) at an applied field of 120 kV/cm. It is demonstrated in this paper that the electron-hole recombination process may prevent the electron transport in the material due to the fact that the carrier recombination time is much shorter than the transit time.

机译：飞行时间方法（TOF）用于测量旋涂的区域规则的聚（3-己基噻吩）（P3HT）薄膜的电子和空穴迁移率。我们发现在120 kV / cm的外加电场下，电子和空穴具有相同的迁移率（约3.83.9×10-4 cm2 / Vs）。本文证明，由于载流子复合时间远短于渡越时间，电子-空穴复合过程可能阻止电子在材料中的传输。

著录项

来源
《Journal of Macromolecular Science. Pure and Applied Chemistry》 |2007年第12期|共4页
作者
Ke Yang; Yanping Wang; Aloke Jain; Lynne Samulson; Jayant Kumar;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类高分子化学（高聚物）;
关键词
time of flight; electron and hole mobility; poly(3-hexylthiophene);

机译：飞行时间;电子和空穴迁移率;聚（3-己基噻吩）;

相似文献

外文文献
中文文献
专利

1. Determination of Electron and Hole Mobility of Regioregular Poly(3-hexylthiophene) by the Time of Flight Method [J] . Ke Yang, Yanping Wang, Aloke Jain, Journal of Macromolecular Science. Pure and Applied Chemistry . 2007,第10a12期

机译：飞行时间法测定区域规则聚（3-己基噻吩）的电子和空穴迁移率
2. Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene) [J] . Jakob J. Brondijk, Francesco Maddalena, Kamal Asadi, Physica status solidi, B. Basic research . 2012,第1期

机译：掺杂和未掺杂区域规则聚（3-己基噻吩）中空穴迁移率的载流子密度依赖性
3. Heuristic description of separate charge transport pathways determined by Time of Flight: Multiple hole transit times in the ubiquitous poly(3-hexylthiophene) [J] . Gong Qianxun, Guo Xiaoqing, Willis Maureen A. C., Organic Electronics . 2019,第Nova期

机译：通过飞行时间确定的单独电荷传输路径的启发式描述：普遍存在的聚（3-己基噻吩）中的多个空穴传输时间
4. Comparison of electron and hole mobilities in multiple quantum well solar cells using a time-of-flight technique [C] . Toprasertpong Kasidit, Tanibuchi Taizo, Fujii Hiromasa, IEEE Photovoltaic Specialists Conference . 2015

机译：使用飞行时间技术比较多量子阱太阳能电池中的电子和空穴迁移率
5. Charge injection and transport in regioregular poly(3-hexylthiophene)-based field-effect transistors. [D] . Singh, Kumar Abhishek. 2010

机译：基于区域规则的聚（3-己基噻吩）的场效应晶体管中的电荷注入和传输。
6. Synergistic Effects of Processing Additives and Thermal Annealing on Nanomorphology and Hole Mobility of Poly(3-hexylthiophene) Thin Films [O] . Min Soo Park, Felix Sunjoo Kim 2019

机译：加工添加剂和热退火对聚（3-己基噻吩）薄膜的纳米形貌和空穴迁移率的协同效应。
7. Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene) [O] . Brondijk Jakob J., Maddalena Francesco, Asadi Kamal, 2012

机译：掺杂和未掺杂区域规则聚（3-己基噻吩）中空穴迁移率的载流子密度依赖性

Determination of Electron and Hole Mobility of Regioregular Poly(3-hexylthiophene) by the Time of Flight Method

摘要

著录项

相似文献

相关主题

期刊订阅