...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of nanoscience and nanotechnology >InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates
【24h】

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

机译：分子束外延生长的InGaAs量子点在Si衬底上的发光

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO_2 fabricated on a SOI substrate. Confinement effects of the Si/SiO_2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO_2/Si/InAs/Si/SiO_2 het-erostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In_(50)Ga_(50)As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.
机译：这项研究的目的是获得分子束外延生长的均匀，高密度和无位错的InGaAs量子点，以在硅衬底上发光。这项工作是一个项目的一部分，该项目旨在克服硅在其光电应用（尤其是高效的发光器件）方面遭受的严重限制。对于本研究，关键点之一是通过将InGaAs量子点插入在SOI衬底上制造的SiO_2中的薄硅量子阱中来克服预期的II型InGaAs / Si界面。预期Si / SiO_2量子阱的约束效应会提高间接硅带隙，然后与InGaAs量子点形成I型界面。在紧密结合近似范围内对能带结构和光学性质进行建模：在非常薄的Si层的SiO_2 / Si / InAs / Si / SiO_2异质结构中证明了直接能带隙，并计算了吸收系数。使用连续蚀刻工艺成功制备了薄的SOI基板，从而在二氧化硅顶部形成了2 nm厚的Si层。从InGaAs量子点获得发光的另一个关键点是避免量子点中的任何位错或缺陷。我们研究了在不同V / III束当量压力比，不同生长温度下以及沉积材料量的函数下的量子点尺寸分布，密度和结构质量。这项研究是针对在Si（001）衬底上生长的InGaAs量子点进行的。进行由硅外延层的InGaAs量子点的封盖，以便从量子点获得有效的光致发光发射。扫描透射电子显微镜图像用于研究量子点的结构质量。在（001）硅基板上成功获得无位错的In_（50）Ga_（50）As QD。还介绍了通过卢瑟福反向散射光谱法在沟道几何结构中对被硅覆盖的量子点的分析。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号