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首页> 外文期刊>Journal of nanoscience and nanotechnology >Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching
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Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching

机译：使用电化学和碱性刻蚀制造高纵横比的p型硅纳米线阵列

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We report on the fabrication of silicon nanostructures with a high aspect ratio that were created using a combination of electrochemical etching and alkaline etching. With this technique, we were able to fabricate nano- and/or micro-wire structures that are perfectly periodic over large areas of 3.14 cm~2. After porous silicon was created by electrochemical etching, the effect of post-alkaline etching was investigated to determine how changes in the etching time, solution concentration and temperature of the etchant influenced the silicon morphology. As a result, periodic silicon wire arrays with good vertical alignment were obtained, and these arrays had a width of less than 500 nm and/or a high aspect ratio of more than 20.
机译：我们报告了高纵横比的硅纳米结构的制造，该结构是使用电化学蚀刻和碱性蚀刻的组合制成的。通过这种技术，我们能够制造出在3.14 cm〜2的大范围内具有完美周期性的纳米线和/或微线结构。在通过电化学蚀刻产生多孔硅之后，研究了碱性后蚀刻的效果，以确定蚀刻时间，溶液浓度和蚀刻剂温度的变化如何影响硅的形态。结果，获得具有良好垂直排列的周期性硅线阵列，并且这些阵列的宽度小于500nm和/或高纵横比大于20。

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