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首页> 外文期刊>Journal of nanoscience and nanotechnology >Study on the Crystallization Process of GaSb-Sb_2Te_3 Pseudobinary Films for Phase-Change Random Access Memory
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Study on the Crystallization Process of GaSb-Sb_2Te_3 Pseudobinary Films for Phase-Change Random Access Memory

机译：GaSb-Sb_2Te_3伪二元膜相变随机存取存储器的结晶过程研究

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摘要

Non-isothermal change in electrical resistance was used to investigate the crystallization process of GaSb-Sb_2Te_3 pseudobinary films prepared by co-sputtering using GaSb and Sb_2Te_3 targets. The crystallization parameters were determined directly by in-situ electrical resistance-temperature measurements. The activation energy of crystallization and rate factor were deduced from the Kissinger's plot. The kinetics exponent was calculated using the Ozawa's method. The crystallization temperature (185～228℃) and activation energy (2.01～5.65 eV) increased monotonically with increasing Ga concentration from 5 to 34 mol%, while the average kinetics exponent decreased from 1.63 to 1.02. The crystallization mechanism of the compositions with Ga concentration more than 10 mol% was one-dimensional growth from the nuclei due to the average kinetics exponent smaller than 1.5. Crystallization time of the studied compositions was estimated theoretically by the Johnson-Mehl-Avrami equation and measured experimentally by the reflectivity change induced by the laser pulse. It is shown that Ga_(27)Sb_(47)Te_(26) film exhibited the shortest crystallization time, suggesting a potential candidate for phase-change random access memory application.
机译：利用电阻的非等温变化研究了使用GaSb和Sb_2Te_3靶材共溅射制备的GaSb-Sb_2Te_3伪二元膜的结晶过程。通过原位电阻-温度测量直接确定结晶参数。从基辛格图推导出了结晶的活化能和速率因子。使用小泽法计算动力学指数。随着Ga的浓度从5mol％增加到34mol％，结晶温度（185〜228℃）和活化能（2.01〜5.65 eV）单调增加，平均动力学指数从1.63降低到1.02。由于平均动力学指数小于1.5，所以Ga浓度大于10mol％的组合物的结晶机理是从核一维生长。理论上，通过Johnson-Mehl-Avrami方程估算了所研究组合物的结晶时间，并通过激光脉冲引起的反射率变化，通过实验测量了结晶时间。结果表明，Ga_（27）Sb_（47）Te_（26）薄膜具有最短的结晶时间，这为相变随机存取存储器的应用提供了可能。

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