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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Marked improvement in the stability of small molecule organic photovoltaics by interfacial modification using self-assembled monolayers to prevent indium diffusion into the active layer
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Marked improvement in the stability of small molecule organic photovoltaics by interfacial modification using self-assembled monolayers to prevent indium diffusion into the active layer

机译：通过使用自组装单分子层进行界面改性以防止铟扩散到活性层中，小分子有机光伏电池的稳定性显着提高

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摘要

This work describes a simple process to improve the stability of small molecule organic photovoltaics (OPVs) that use poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL), without reducing the power conversion efficiency (PCE). We investigated the effect of self-assembled monolayers (SAMs) on the degradation of electrical properties caused by the diffusion of indium through the matrix commonly used in OPV devices. X-ray photoelectron spectroscopy depth profiles suggested that the acidic PEDOT:PSS etched the indium from the indium tin oxide (ITO) electrode, which resulted in indium diffusion into and chemical interaction with the active layer. Such behavior was responsible for the deterioration of the device. By inserting a self-assembled monolayer (SAM) with carboxylic acid functional groups at the interface between the ITO and PEDOT:PSS layers, such diffusion could be significantly suppressed, the PCE of the pristine OPV diminished to zero at 49 days post-fabrication under ambient conditions. However, the PCE of the SAM-modified device was reduced by only 30% over the same period, and only to 48% after 98 days. Moreover, the SAMs improved the interfacial electrical properties between the ITO and PEDOT:PSS layers, which maintained the PCE of the device. Our findings suggest a simple approach to improve the stability of OPVs that utilize PEDOTPSS as the HTL.
机译：这项工作描述了一种简单的方法来提高使用聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）作为空穴传输层（HTL）的小分子有机光伏（OPV）的稳定性，而不会降低功率转换效率（PCE）。我们研究了自组装单分子膜（SAMs）对铟在OPV器件中常用的基质中扩散引起的电性能下降的影响。 X射线光电子能谱深度剖面表明，酸性PEDOT：PSS从铟锡氧化物（ITO）电极上蚀刻了铟，这导致铟扩散到活性层中并与活性层发生化学相互作用。这种行为是导致设备性能下降的原因。通过在ITO和PEDOT：PSS层之间的界面处插入具有羧酸官能团的自组装单层（SAM），可以显着抑制这种扩散，原始OPV的PCE在以下条件下制备后第49天降低为零：环境条件。但是，SAM修改设备的PCE在同一时期仅降低了30％，而在98天后仅降低到48％。此外，SAM改善了ITO和PEDOT：PSS层之间的界面电性能，从而保持了设备的PCE。我们的发现提出了一种简单的方法来提高利用PEDOTPSS作为HTL的OPV的稳定性。

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