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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Low operation voltage macromolecular composite memory assisted by graphene nanoflakes
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Low operation voltage macromolecular composite memory assisted by graphene nanoflakes

机译：石墨烯纳米薄片辅助的低工作电压高分子复合存储

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摘要

The trend towards simple and low-cost processing is one of the most important for macromolecular memory development. Here, bistable memory devices using a solution-processable active material, a mixture of graphene nanoflakes (GNFs) and insulating poly(vinyl alcohol) (PVA), are investigated, which serve as the first example for the direct integration of as-prepared nanoscale graphene into macromolecular memory devices through a one-step low-temperature processing method. Bistable electrical switching behavior and nonvolatile rewritable memory effects are realized by using an indium-tin-oxide/GNF-PVA/silver (ITO/GNF-PVA/Ag) sandwich structure. The resulting device exhibits low operation voltages of +1.4 V (turn-on) and -1.3 V (turn-off), which is promising for memory cells with low power consumptions. The programmable ON- and OFF-states possess a retention time of over 104 s and endure up to 10~7 read pulses. The carrier transport in the OFF- and ON-states follows the typical trap-limited space charge limited current and Ohmic laws, respectively. The asymmetric electrical switch behavior is therefore attributed to conducting filaments formed in the PVA layer assisted by the charged GNFs that induce the transition of the conductivity. Our study provides a potential approach for integrating as-prepared graphene into macromolecular memory devices with excellent performances through a simple solution-process.
机译：简单和低成本处理的趋势是大分子存储器开发中最重要的趋势之一。在这里，研究了使用溶液可加工活性材料，石墨烯纳米薄片（GNF）和绝缘聚乙烯醇（PVA）的混合物的双稳态存储器件，这是直接集成制备好的纳米级器件的第一个示例石墨烯通过一步式低温加工方法进入大分子存储器件。通过使用氧化铟锡/ GNF-PVA /银（ITO / GNF-PVA / Ag）夹心结构可实现双稳态电开关行为和非易失性可重写存储效应。最终的器件表现出+1.4 V（接通）和-1.3 V（关断）的低工作电压，这对于具有低功耗的存储单元很有希望。可编程的ON和OFF状态具有超过104 s的保持时间，并可以承受10〜7个读取脉冲。处于OFF和ON状态的载流子传输分别遵循典型的陷阱限制空间电荷限制电流和欧姆定律。因此，不对称的电开关行为归因于在PVA层中形成的导电细丝，该导电细丝在带电的GNF的辅助下诱导了导电性的转变。我们的研究提供了一种潜在的方法，可通过简单的溶液处理方法将制备的石墨烯集成到具有出色性能的大分子存储设备中。

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