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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Defect to R~(3+) energy transfer: colour tuning of persistent luminescence in CdSiO3
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Defect to R~(3+) energy transfer: colour tuning of persistent luminescence in CdSiO3

机译：R〜（3+）能量转移的缺陷：CdSiO3中持续发光的颜色调整

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摘要

Luminescence from trivalent rare earth (R~(3+): La~(3+)-Lu~(3+), excluding Pm~(3+)) ions was studied in the CdSiO3 host. The positions of the R~(2+/3+) energy levels in the band structure of CdSiO3 suggest that the doping of CdSiO3 with R~(2+) ions is difficult if not impossible. Red, pink, blue, green and close to white persistent luminescence colours were obtained by doping with Pr~(3+), Sm~(3+), Gd~(3+), Tb~(3+) and Dy~(3+), respectively. The efficiency of the defect to R~(3+) energy transfer determines if persistent luminescence arises from the 4f-4f, defect or a combination of these two emissions. In contrast to what is observed for Pr~(3+) and Tb~(3+), the defect to R~(3+) energy transfer did not give efficient persistent luminescence for Sm~(3+) and Dy~(3+), probably due to high energy losses and/or back transfer from the rare earth to defects. In line with the experimental observations, the in situ synchrotron radiation XANES spectra indicated the presence of only the trivalent Pr~(3+) and Tb~(3+) species thus excluding the direct R~(3+) → R~(IV) oxidation during the charging process of persistent luminescence. Finally, based on the band gap energy, R~(2+/3+) energy level positions, trap energies, and other optical and structural properties, the mechanism of persistent luminescence was developed for Pr~(3+) doped CdSiO3. For practical applications, the CdSiO3:R~(3+) system offers an excellent possibility for colour tuning of persistent luminescence by changing only the R~(3+) dopant instead of altering the host as is the case with the Eu~(2+) doped materials. Eventually, this will avoid the waste of both intellectual and financial resources.
机译：在CdSiO3基质中研究了三价稀土（R〜（3+）：La〜（3 +）-Lu〜（3+），不包括Pm〜（3+））离子的发光。 CdSiO3的能带结构中R〜（2 + / 3 +）能级的位置表明，即使不是不可能，用R〜（2+）离子掺杂CdSiO3也很困难。通过掺杂Pr〜（3 +），Sm〜（3 +），Gd〜（3 +），Tb〜（3+）和Dy〜（获得红色，粉红色，蓝色，绿色和接近白色的持久发光色3+）。缺陷对R〜（3+）能量转移的效率决定了持久发光是由4f-4f，缺陷还是这两种发射的组合引起的。与Pr〜（3+）和Tb〜（3+）观察到的相反，R〜（3+）能量转移的缺陷并未为Sm〜（3+）和Dy〜（3 +），可能是由于高能量损失和/或从稀土向缺陷的反向转移。与实验观察一致，原位同步辐射XANES光谱表明仅存在三价Pr〜（3+）和Tb〜（3+）物种，因此不包括直接R〜（3+）→R〜（IV ）在持续发光的充电过程中发生氧化。最后，基于带隙能量，R〜（2 + / 3 +）能级位置，陷阱能以及其他光学和结构性质，研究了Pr〜（3+）掺杂CdSiO3的持久发光机理。对于实际应用，CdSiO3：R〜（3+）系统通过仅改变R〜（3+）掺杂剂而不是像Eu〜（2）那样改变基质，为持久发光的颜色调节提供了极好的可能性+）掺杂材料。最终，这将避免浪费智力和财务资源。

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