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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Design of rewritable and read-only non-volatile optical memory elements using photochromic spiropyran-based salts as light-sensitive materials
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Design of rewritable and read-only non-volatile optical memory elements using photochromic spiropyran-based salts as light-sensitive materials

机译：使用基于光致变色螺吡喃盐的光敏材料设计可重写和只读的非易失性光学存储元件

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Here we applied photochromic spiropyran-based salts SP1 and SP2 as light-sensitive components of OFET-based non-volatile optical memory elements. Electrooptical programming by applying simultaneously light bias and gate (programming) voltage allowed us to demonstrate wide memory windows, high programming speeds (programming time of 0.5-20 ms), and good retention characteristics of the devices. It is remarkable that a minor difference in the molecular structures of the used spiropyran-based salts (the hydrogen atom in the structure of SP1 is replaced with the NO2 group in SP2) altered completely the behavior of the devices. Thus, OFETs comprising interlayers of the spiropyran-based salt SP1 showed a reversible photoelectrical switching which is characteristic for flash memory elements with good write-read-erase cycling stability. In contrast, devices based on the spiropyran-based salt SP2 demonstrated irreversible switching and operated as read-only memory (ROM). Both types of devices revealed the formation of multiple distinct electrical states thus resembling the behavior of multibit memory elements capable of high-density information storage.
机译：在这里，我们将基于光致变色螺吡喃的盐SP1和SP2用作基于OFET的非易失性光学存储元件的光敏组件。通过同时施加光偏压和栅极（编程）电压进行电光编程，使我们能够展示出宽存储窗口，高编程速度（0.5-20 ms的编程时间）以及良好的器件保持特性。值得注意的是，所使用的螺吡喃基盐的分子结构中的微小差异（SP1结构中的氢原子被SP2中的NO2基团取代）完全改变了器件的性能。因此，包含螺吡喃基盐SP1的中间层的OFET显示出可逆的光电开关，这是具有良好的读写-擦除循环稳定性的闪存元件的特征。相反，基于螺吡喃盐SP2的设备显示出不可逆的切换，并作为只读存储器（ROM）运行。两种类型的设备都揭示了多种不同电状态的形成，因此类似于能够进行高密度信息存储的多位存储元件的行为。

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