...
首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Structural evolution and carrier scattering of Si nanowires as a function of oxidation time
【24h】

Structural evolution and carrier scattering of Si nanowires as a function of oxidation time

机译:Si纳米线的结构演变和载流子散射随氧化时间的变化

获取原文
获取原文并翻译 | 示例
           

摘要

We investigated the morphological characteristics of the cross-sectional shape of Si-core nanowires (NWs) as a function of oxidation time. In the case of as-grown Si NWs, the Si cores were hexagons with a 3-fold symmetry, not a 6-fold symmetry, and this shape was transformed into a triangular shape with rounded edges after thermal oxidation. Structural changes in the cross-section of the Si-core NWs were related to the surface free energy. Moreover, the morphological change in the oxide shell during the oxidation treatment suggested that the stress relaxation process is closely related to the structural evolution of the Si core. The change in defect states generated in Si/SiO2 core/shell NWs during structural evolution was investigated by low-temperature photoluminescence and optical pump-THz probe spectroscopy measurements. In particular, surface defect states formed in the interfacial region between the Si core and the oxide shell were reduced during the oxidation process. Appropriate control of the surface state affected carrier scattering: the relaxation time of photogenerated carriers was significantly increased due to the reduction in surface defects.
机译:我们调查了硅芯纳米线(NWs)的横截面形状随氧化时间变化的形态特征。对于成年的Si NW,Si核是具有3倍对称性而不是6倍对称性的六边形,并且在热氧化后,该形状转变为带有圆形边缘的三角形。 Si核NW横截面的结构变化与表面自由能有关。此外,氧化处理过程中氧化物壳的形态变化表明应力松弛过程与Si核的结构演变密切相关。通过低温光致发光和光泵-THz探针光谱测量研究了结构演化过程中Si / SiO2核/壳NWs中产生的缺陷状态的变化。特别地,在氧化过程中,减少了在Si核和氧化物壳之间的界面区域中形成的表面缺陷状态。适当控制表面状态会影响载流子的散射:由于减少了表面缺陷,光生载流子的弛豫时间大大增加。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号