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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Phase transition and piezoelectricity of sol-gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates
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Phase transition and piezoelectricity of sol-gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

机译：Pt（111）/ Ti / SiO2 / Si衬底上溶胶-凝胶处理的掺Sm的BiFeO3薄膜的相变和压电性

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摘要

Bi1-xSmxFeO3 thin films (x - 0, 0.05, 0.10 and 0.15) on Pt(111)/Ti/SiO2/Si substrates were fabricated by the sol-gel process and the effect of Sm doping on their crystal structure was studied by synchrotron radiation X-ray diffraction and Raman spectroscopy. It is revealed that a phase transition from the rhombohedral to orthorhombic structure takes place with increasing Sm content, resulting in two-phase coexistence at x = 0.10, where the two phases are R3c and Pbam according to the refinement result. The phase transition can be ascribed to the difference between the smaller radius of substituted Sm3+ and Bi3+. Meanwhile, the composition-dependent dielectric, ferroelectric and piezoelectric properties were also investigated. PFM scanning and switching spectroscopy results confirmed the enhancement of the piezoresponse at x = 0.10 corresponding to the rhombohedral-orthorhombic morphotropic phase boundary (MPB) region. The ferroelectric properties of Sm-doped BiFeO3 films were found to decrease with increasing Sm content, indicating that the extrinsic piezoelectric response contributes more to the improved piezoelectricity at the MPB.
机译：采用溶胶-凝胶法在Pt（111）/ Ti / SiO2 / Si衬底上制备了Bi1-xSmxFeO3薄膜（x-0、0.05、0.10和0.15），并通过同步加速器研究了Sm掺杂对其晶体结构的影响。辐射X射线衍射和拉曼光谱。结果表明，随着Sm含量的增加，从菱形结构向正交结构发生相变，在x = 0.10处出现两相共存，根据精炼结果，两相分别为R3c和Pbam。相变可归因于取代的Sm3 +和Bi3 +的较小半径之间的差异。同时，还研究了成分相关的介电，铁电和压电性能。 PFM扫描和切换光谱结果证实了x = 0.10处的压电响应增强，对应于菱形-斜方晶相相界（MPB）区域。发现掺Sm的BiFeO3薄膜的铁电性能会随着Sm含量的增加而降低，这表明非本征压电响应对改善MPB的压电性贡献更大。

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