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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis
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Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

机译：探讨喷雾热解法制备的Al，Ga和In掺杂ZnO的掺杂机理和电性能

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摘要

The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low doping range i.e. 0.1-1 at%, where we observe unexpected variations in charge carrier concentration and mobility and propose a mechanism to explain our observations. In this doping range highly resistive films are formed hence we highlight AC Hall as a reliable and highly reproducible technique for analysing electrical properties and subsequently elucidate the doping mechanisms. The implementation of a simple, post-deposition heat treatment demonstrated on our AZO results in typical films with charge carrier concentrations exceeding >10(19) cm(-3), and electron mobilities >10 cm(2) V-1 s(-1) and stability exceeding 180 days. We describe in detail the nature of the defect chemistry and the role of intrinsic defects and show, that despite significant variations in dopant species and grain boundary concentrations, that the defect chemistry dominates the electrical characteristics.
机译：据报道，在0.1-3 at％的掺杂范围内，使用喷雾热解沉积的Al，Ga和In掺杂的ZnO薄膜的结构，光学和电学特性均得到了报告。在整个掺杂系列中，制备了高度透明的多晶薄膜。使用交流霍尔作为一种测量技术，我们可以探测掺杂薄膜的电子特性，从而消除掺杂对测得的载流子浓度和霍尔迁移率的影响。我们专注于低掺杂范围，即0.1-1 at％，在该范围内我们观察到了电荷载流子浓度和迁移率的意外变化，并提出了一种机制来解释我们的观察结果。在此掺杂范围内，形成了高电阻膜，因此我们着重指出AC Hall是一种可靠且可重现的技术，用于分析电性能并随后阐明掺杂机理。在我们的AZO上演示了一种简单的沉积后热处理的实施方法，导致典型的膜的载流子浓度超过10（19）cm（-3），电子迁移率> 10 cm（2）V-1 s（- 1）稳定性超过180天。我们详细描述了缺陷化学的性质和固有缺陷的作用，并表明，尽管掺杂物种类和晶界浓度发生了显着变化，但缺陷化学仍主导着电气特性。

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