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首页> 外文期刊>Journal of Materials Engineering and Performance >Electrochemical Planarization of Patterned Copper Films for Microelectronic Applications
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Electrochemical Planarization of Patterned Copper Films for Microelectronic Applications

机译：用于微电子应用的图案化铜膜的电化学平坦化

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摘要

Electrochemical polishing (ECP) of copper (Cu) using solutions of phosphoric acid, sulfuric acid, sodium chloride, ethylene glycol, and hydroxyethylidenediphosphonic acid (HEDP), with or without organic and inorganic additives, has been investigated as an alternative to chemical mechanical polishing (CMP) for integration of low-k dielectrics in microelectronic devices. Copper anodic polarization curves in these solutions were measured. ECP of Cu bulk and thin films in these solutions was evaluated with atomic force microscopy and scanning electron microscopy. It was shown that most of the solutions studied have polarization curves with a limiting current plateau characteristic of ECP. Among them, phosphoric acid, HEDP, and phosphoric acid solutions with ethylene glycol, sodium tripolyphosphate, and Cu oxide as additives produced the best electropolished surfaces (mean roughness: R_a < 10 nm) on bulk Cu. However, satisfactory ECP of electroplated patterned Cu films on silicon wafers were achieved only with an electrolyte that produced a salt film at the anode surface. Based on these experimental results, ECP mechanisms and optimal conditions for ECP of patterned Cu films plated on silicon wafers are presented.
机译：已经研究了使用磷酸，硫酸，氯化钠，乙二醇和羟乙基二烯二膦酸（HEDP）溶液对铜（Cu）进行的化学抛光（ECP），有无有机和无机添加剂，可以替代化学机械抛光（CMP）用于在微电子设备中集成低k电介质。测量了这些溶液中的铜阳极极化曲线。用原子力显微镜和扫描电子显微镜评估了这些溶液中的铜块和薄膜的ECP。结果表明，研究的大多数解决方案都具有极化曲线，其极化曲线具有ECP的极限电流平稳特性。其中，以乙二醇，三聚磷酸钠和氧化铜为添加剂的磷酸，HEDP和磷酸溶液在块状Cu上产生了最佳的电抛光表面（平均粗糙度：R_a <10 nm）。然而，仅通过在阳极表面产生盐膜的电解质，才能实现令人满意的ECP电镀硅晶片上的图案化Cu膜。基于这些实验结果，提出了电镀在硅片上的图案化铜膜的ECP机理和ECP的最佳条件。

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