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首页> 外文期刊>Journal of Materials Engineering and Performance >Microstructure and Properties of DCP-Derived W-ZrC Composite Using Nontoxic Sodium Alginate to Fabricate WC Preform
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Microstructure and Properties of DCP-Derived W-ZrC Composite Using Nontoxic Sodium Alginate to Fabricate WC Preform

机译：无毒藻酸钠制备DCP的W-ZrC复合材料的组织和性能

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摘要

In the present work, tungsten carbide (WC) preforms were fabricated by gel-casting process, using different nontoxic Na-alginate to tertiary calcium phosphate ratios and different loadings of WC powder in the initial slurries. The gel-cast green bodies were dried and pre-sintered at 1723 K for 4 h and then reactively infiltrated by molten Zr2Cu at 1623 K for 0.5 h, to produce W-ZrC composite via displacive compensation of porosity process. The phases, microstructures, and mechanical properties of the preforms and the W-ZrC composites were investigated by Fourier transform infrared spectroscope, x-ray diffractometer (XRD), scanning electron microscope (SEM), image analyzer, and universal mechanical testing machine. XRD results, SEM micrographs, and elemental maps indicated uniform distribution of phases (W and ZrC) and elements (W, Zr, and C). Flexural strengths and hardness of the fabricated composites were in the ranges of 429-460 MPa and 7.5-9.5 GPa, respectively. Fractography studies revealed two types of dimple rupture and cleavage fracture modes in different composite samples. The W-ZrC composite was ablated by an oxyacetylene flame for 60 s. The mean value of mass and linear ablation rates of the composite were 2.1 +/- A 0.1 mg/s and 3.6 +/- A 0.5 A mu m/s, respectively.
机译：在目前的工作中，碳化钨（WC）预成型件是通过凝胶浇铸工艺制造的，在初始浆料中使用了不同的无毒海藻酸钠与叔磷酸钙比率和不同的WC粉末负载量。将凝胶浇铸的生坯干燥并在1723 K下预烧结4 h，然后通过熔融的Zr2Cu在1623 K下反应性渗透0.5 h，通过位移补偿法制备W-ZrC复合材料。通过傅立叶变换红外光谱仪，X射线衍射仪（XRD），扫描电子显微镜（SEM），图像分析仪和通用机械测试机研究了预成型坯和W-ZrC复合材料的相，微观结构和力学性能。 XRD结果，SEM显微照片和元素图表明相（W和ZrC）和元素（W，Zr和C）的均匀分布。制成的复合材料的弯曲强度和硬度分别在429-460 MPa和7.5-9.5 GPa的范围内。断口扫描研究表明，在不同的复合材料样品中，酒窝破裂和解理断裂模式分为两种类型。 W-ZrC复合材料被氧乙炔火焰烧蚀60 s。复合材料的质量平均值和线性烧蚀速率分别为2.1 +/- A 0.1 mg / s和3.6 +/- A 0.5 Aμm / s。

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