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首页> 外文期刊>Journal of Materials Engineering and Performance >Effects of Recrystallization on Microstructure and Texture Evolution of Cold-Rolled Ti-6Al-4V Alloy
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Effects of Recrystallization on Microstructure and Texture Evolution of Cold-Rolled Ti-6Al-4V Alloy

机译：再结晶对冷轧Ti-6Al-4V合金组织和组织演变的影响

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摘要

The effects of recrystallization during annealing process on microstructure and texture evolution of cold-rolled Ti-6Al-4V alloy plates were investigated. The plates after cold rolling with a thickness reduction of 5, 10, and 15% were annealed under different conditions of 750 A degrees C for 1 h, 800 A degrees C for 1 h, and 800 A degrees C for 1.5 h, respectively. It was found out that the recrystallization temperature decreased with increasing rolling reduction due to higher storage energy, while the extension of annealing time caused grain growth. For the cold-rolled plate with a reduction of 10%, the resulting microstructure showed more equal-axis grains after annealing at 800 A degrees C for 1 h, among different conditions. Moreover, the XRD results showed that the cold-rolled plate composed mainly of {0001} aOE (c) 10-10 > basal texture, {10-11} aOE (c) 1-210 > and {01-12} aOE (c) 10-10 > pyramidal textures, and {01-10} aOE (c) 10-10 > prismatic texture, and that the weak {10-11} aOE (c) 1-210 > texture was transformed to components {01-12} aOE (c) 10-10 > and {01-10} aOE (c) 10-10 >, which were expected to improve formability. Electron back-scattered diffraction results ascertained that two mechanisms, i.e., recrystallization sites of preferred orientations and favorable grain growth both played important roles in static recrystallization.
机译：研究了退火过程中的再结晶对冷轧Ti-6Al-4V合金板的组织和组织演变的影响。将厚度分别降低了5％，10％和15％的冷轧后的板分别在750 A的温度下退火1小时，800 A的温度下退火1 h和800 A的温度下分别退火1.5 h。结果发现，由于较高的储能，再结晶温度随压下量的增加而降低，而退火时间的延长导致晶粒的长大。对于减少了10％的冷轧板，在不同条件下，在800 A的温度下退火1小时后，所得的显微组织显示出更多的等轴晶粒。另外，XRD结果表明，冷轧板主要由{0001} aOE（c）10-10>基础组织，{10-11} aOE（c）1-210>和{01-12} aOE（ c）10-10>金字塔形纹理，{01-10} aOE（c）10-10>棱柱形纹理，弱的{10-11} aOE（c）1-210>纹理已转换为成分{01 -12} aOE（c）10-10>和{01-10} aOE（c）10-10>有望改善可成形性。电子背散射衍射结果确定了两种机制，即优选取向的再结晶位点和有利的晶粒生长在静态再结晶中均起重要作用。

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