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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Properties of Ga-doped ZnO films
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Properties of Ga-doped ZnO films

机译：Ga掺杂ZnO薄膜的性能

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Transparent conductive films of Ga-doped ZnO (GZO) were deposited on glass substrates by de magnetron sputtering using a ZnO target with Ga2O3 content of 3 to 10 wt%. The dependence of electrical properties on substrate temperature, Ga2O3 contents in the sputtering target and magnetic field strength at the target surface were investigated. It was found that the resistivity depended on both substrate temperature and Ga2O3 content. At substrate temperatures of 100 degrees C, resistivity decreased with increasing Ga2O3 content and 6.5 x 10(-4) Omega cm was obtained for a Ga2O3 content of 7.5-10.0 wt%. When the substrate temperature was increased to 300 degrees C, GZO films deposited using 4.5 to 5.7 wt% Ga2O3 targets had a resistivity of 2.7 x 10(-4) Omega scm. In addition, the resistivity was found to decrease with increasing magnetic field strength. When the substrate temperature and Ga2O3 content were 100 degrees C and 7.5 wt%, respectively, the resistivity decreased from 6.5 x 10(-4) to 2.9 x 10(-4) Omega cm by increasing the magnetic field strength from 3.0 x 10(-2) to 6.5 x 10(-2) T. The minimum resistivity of 2.2 x 10(-4) Omega cm was obtained at 250 degrees C (Ga2O3 content:5.7 wt%) for a magnetic field strength of 6.5 x 10(-2) T. The decrease in resistivity was due to the increase both in carrier concentration and mobility. (C) 1997 Elsevier Science B.V.
机译：使用具有3至10 wt％的Ga2O3的ZnO靶，通过磁控溅射法在玻璃基板上沉积Ga掺杂的ZnO（GZO）的透明导电膜。研究了电学性质对衬底温度，溅射靶中Ga2O3含量和靶表面磁场强度的依赖性。发现电阻率取决于衬底温度和Ga 2 O 3含量。在100摄氏度的衬底温度下，电阻率随Ga2O3含量的增加而降低，并且当Ga2O3含量为7.5-10.0 wt％时，电阻率为6.5 x 10（-4）Ωcm。当衬底温度升高到300摄氏度时，使用4.5至5.7 wt％的Ga2O3靶沉积的GZO膜的电阻率为2.7 x 10（-4）Ω·scm。另外，发现电阻率随着磁场强度的增加而降低。当衬底温度和Ga2O3含量分别为100摄氏度和7.5 wt％时，通过将磁场强度从3.0 x 10（升高），电阻率从6.5 x 10（-4）降低到2.9 x 10（-4）Ω·cm。 -2）至6.5 x 10（-2）T.在6.5 x 10（磁场强度）下，在250摄氏度（Ga2O3含量：5.7 wt％）下获得的最小电阻率为2.2 x 10（-4）Ω·cm -2）T。电阻率的降低是由于载流子浓度和迁移率的增加。 （C）1997年Elsevier Science B.V.

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