...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>CERAMICS INTERNATIONAL >Characterization of ZnO nanowires grown on Ga-doped ZnO transparent conductive thin films: Effect of deposition temperature of Ga-doped ZnO thin films
【24h】

Characterization of ZnO nanowires grown on Ga-doped ZnO transparent conductive thin films: Effect of deposition temperature of Ga-doped ZnO thin films

机译：掺杂Ga的ZnO透明导电薄膜上生长的ZnO纳米线的表征：掺杂Ga的ZnO薄膜的沉积温度的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

ZnO nanowires on Ga-doped ZnO (GZO) transparent conductive thin films deposited at different substrate temperatures were demonstrated and characterized. The GZO thin films were deposited at various substrate temperatures ranging from 200 to 600 degrees C in order to study the influence of deposition temperature of the GZO on the characteristics of the ZnO nanowires. The resistivity of the GZO thin films decreased from 5.11 x 10(-4) (200 degrees C) to 4.83 x 10(-4) Omega cm (400 degrees C) and then increased to 6.12 x 10(-4) Omega cm (600 degrees C). The ZnO nanowires were grown vertically and were highly c-axis oriented on the GZO thin films at every deposition temperature without any seed layers. The crystallinity of the ZnO nanowires was improved with increasing deposition temperature of the GZO thin films. In addition, as deposition temperature increased, the diameter of the ZnO nanowires increased, while the density decreased. Photoluminescence (PL) measurement and energy-dispersive X-ray spectroscopy (EDX) proved that the ZnO nanowires on the GZO thin films deposited at higher substrate temperature had less defects and were closer to stoichiometric ZnO. After the growth of the ZnO nanowires on the GZO thin films, the transmittance decreased with respect to that of the GZO only thin films, but the sample was still transparent with an average optical transmittance higher than 70%. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译：演示并表征了在不同衬底温度下沉积的Ga掺杂ZnO（GZO）透明导电薄膜上的ZnO纳米线。为了研究GZO的沉积温度对ZnO纳米线特性的影响，在200至600摄氏度的各种衬底温度下沉积了GZO薄膜。 GZO薄膜的电阻率从5.11 x 10（-4）（200摄氏度）降低到4.83 x 10（-4）Ω厘米（400摄氏度），然后增加到6.12 x 10（-4）Ω厘米（ 600摄氏度）。 ZnO纳米线垂直生长，并且在每个沉积温度下都高度c轴取向在GZO薄膜上，没有任何种子层。 ZnO纳米线的结晶度随GZO薄膜沉积温度的提高而提高。另外，随着沉积温度的升高，ZnO纳米线的直径增加，而密度降低。光致发光（PL）测量和能量色散X射线光谱（EDX）证明，在较高衬底温度下沉积的GZO薄膜上的ZnO纳米线具有较少的缺陷，并且更接近化学计量的ZnO。在GZO薄膜上生长ZnO纳米线后，透射率相对于仅GZO薄膜有所降低，但样品仍是透明的，平均光学透射率高于70％。 （C）2015 Elsevier Ltd和Techna Group S.r.l.版权所有。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号