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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Growth of heavy ion-induced nanodots at the SiO2-Si interface: Correlation with ultrathin gate oxide reliability
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Growth of heavy ion-induced nanodots at the SiO2-Si interface: Correlation with ultrathin gate oxide reliability

机译：SiO2-Si界面上重离子诱导的纳米点的生长：与超薄栅极氧化物可靠性的关系

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Scaling-down the oxide thickness induces weakness influencing its intrinsic reliability. Even unbiased, swift heavy ions irradiated devices clearly show oxide alteration. Despite numerous studies on oxide reliability, some results are not yet well understood. In this paper, we focus on the structural degradation induced in thin silicon oxide films on silicon substrate after a 210 MeV low fluence gold ion irradiation and on its effect on the reliability of MOS devices in radiation-harsh environments. We describe such degradation as a local silicon growth in the SiO2 layer, near the SiO2-Si interface. Experimental results can bring some emergent elements to explain earlier works in the field of oxide reliability. Based on the specific behavior of heavy ion-irradiated oxides, this paper aims to link together thermal spike model, heavy ion-induced nanodots and reliability of ultrathin gate oxides. We propose to evaluate the possible sensitivity of some high-k materials in radiation-harsh environments with respect to their thermal conductivity property. (c) 2005 Elsevier B.V. All rights reserved.
机译：按比例缩小氧化物厚度会导致影响其固有可靠性的弱点。即使是无偏，快速重离子辐照的设备，也清楚地显示出氧化物的变化。尽管对氧化物可靠性进行了大量研究，但一些结果仍未得到很好的理解。在本文中，我们着重于在210 MeV低通量金离子辐照后在硅衬底上的薄氧化硅膜中引起的结构退化，以及其对辐射恶劣环境下MOS器件可靠性的影响。我们将这种退化描述为SiO2-Si界面附近的SiO2层中的局部硅生长。实验结果可以带来一些新兴因素来解释氧化物可靠性领域中的早期工作。基于重离子辐照氧化物的特定行为，本文旨在将热尖峰模型，重离子诱导的纳米点和超薄栅氧化物的可靠性联系在一起。我们建议评估一些高k材料在辐射恶劣的环境中相对于其导热性能的敏感性。 （c）2005 Elsevier B.V.保留所有权利。

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