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Effect of lead additive on photoconductive properties of Se-Te chalcogenide films

机译:铅添加剂对Se-Te硫族化物薄膜光电导性能的影响

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Steady state and transient characteristics of photoconductivity have been studied in amorphous thin films of Se85Te15-xPbx(x = 0, 2, 4 and 6). The studies of temperature dependence of photoconductivity show that photoconduction is a thermally activated process. The value of activation energy of photoconduction is, however, smaller as compared to activation energy in dark. The results of intensity dependence of steady state photoconductivity indicate that bimolecular recombination is predominant in these materials. The Se85Te15-xPbx is found highly composition dependent as lead impurity drastically changes the conduction parameters. The incorporation of Pb impurity is found to affect the transient photoconductivity properties drastically. A spike is observed in the rise curve of photocurrent in undoped a-Se85Te15, which disappears in Pb doped samples. The lead incorporation is found to delay the onset time of recombination in the rise and decay of photocurrent which is attributed to the trapping of charge carriers in deep localized states produced by lead impurity. The photocurrent rise and decay is explained by the trap-controlled recombination model proposed by Iovu et a]. and the dispersion parameter alpha of localized state energy distribution is determined from the experimental results. (c) 2005 Elsevier B.V. All rights reserved.
机译:研究了Se85Te15-xPbx(x = 0、2、4和6)的非晶薄膜的光电导率的稳态和瞬态特性。光电导的温度依赖性研究表明,光电导是一个热激活过程。然而,与在黑暗中的活化能相比,光电导的活化能的值较小。稳态光电导强度依赖性的结果表明,在这些材料中双分子重组是主要的。发现Se85Te15-xPbx具有高度的成分依赖性,因为铅杂质会极大地改变导电参数。发现掺入Pb杂质会极大地影响瞬态光电导性能。在未掺杂的a-Se85Te15中,在光电流的上升曲线中观察到一个尖峰,在掺Pb的样品中消失。发现掺入铅会延迟在光电流的上升和衰减中复合的开始时间,这归因于电荷载流子在铅杂质产生的深局部状态中的捕获。光电流的上升和下降由Iovu等人提出的陷阱控制的重组模型解释。根据实验结果确定了局部态能量分布的色散参数α。 (c)2005 Elsevier B.V.保留所有权利。

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