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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Short-lived excited states of oxygen-deficient centers in amorphous SiO2
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Short-lived excited states of oxygen-deficient centers in amorphous SiO2

机译：非晶态SiO2中缺氧中心的短时激发态

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摘要

Samples of two pure silica glasses have been investigated by high-power pulsed cathodoluminescence as well as by synchrotron-photoluminescence and photoluminescence excitation spectroscopy with respect to the association of excitation and absorption bands to respective emission bands and the lifetime of excited defect states. The several types of structurally non-equivalent centers of the oxygen-deficient center (ODC) type were detected. The germanium related oxygen-deficient center shows luminescent bands at 3.1 and 4.3 eV. It is shown that both the radiative transitions of the GeODC center are really interconnected by excitation and lifetime. The presence of the silicon related SiODC with a luminescent band at 4.5 eV is established on the basis of characteristic decay time. The different schemes of radiative and non-radiative transitions for excited Ge- and Si-related ODCs are discussed. The conclusion is made that the model of twofold coordinated Si and Ge atoms in silica glasses does not provide an adequate description of the fast relaxation of ODCs. Possible conversion mechanisms of short-living excited ODC-states are considered using an anomalous relaxation model for a neutral diamagnetic oxygen vacancy. © 2005 Elsevier B.V. All rights reserved.
机译：已经通过高功率脉冲阴极发光以及同步加速器-光致发光和光致发光激发光谱法研究了两种纯石英玻璃的样品，以了解激发和吸收带与各个发射带的关联以及激发缺陷态的寿命。检测到了缺氧中心（ODC）类型的几种结构上不等价的中心。锗相关的缺氧中心在3.1和4.3 eV处显示发光带。结果表明，GeODC中心的两个辐射跃迁实际上都是通过激发和寿命相互联系的。基于特征衰减时间确定存在与硅有关的SiODC，其发光带为4.5 eV。讨论了与Ge和Si相关的ODC激发态的辐射跃迁和非辐射跃迁的不同方案。结论是，石英玻璃中Si和Ge原子的二元配位模型不能充分描述ODCs的快速弛豫。对于中性反磁性氧空位，使用异常弛豫模型考虑了短时激发的ODC状态的可能转换机制。 ＆复制; 2005 Elsevier B.V.保留所有权利。

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