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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Microstructural and defect population change in electron beam irradiated Ge : SiO2 MCVD glasses in the conditions of refractive index change writing
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Microstructural and defect population change in electron beam irradiated Ge : SiO2 MCVD glasses in the conditions of refractive index change writing

机译：折射率改变条件下电子束辐照的Ge：SiO2 MCVD玻璃的微结构和缺陷种群变化。

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Electron spin resonance (ESR) and ultra violet (UV) optical absorption spectra are measured in Ge:SiO2, glasses elaborated by modified chemical vapor deposition (MCVD) and irradiated by an electron beam of medium energy (10-50 keV). The doses (a few Gem 2) like the electron energy used, correspond to conditions for writing refractive index change for optical applications. These data yielded information on defect population changes. Raman spectroscopy was used for correlating these changes to microstructural changes. We point out a 5.1 eV absorption bleaching like surprisingly the one occurring under 5 eV laser irradiation correlated to an absorption increases around (4.4 and 5.8 eV). E ' centres are also produced. More specifically, we found in a previous work two domains of irradiation parameters for samples with large Ge content for which specific volume increases or decreases. We thus precise in this paper that (1) when compaction occurs, detectable by surface topography depression and D2 peak intensity increase, Si E ' centres are produced and a diamagnetic component absorbing strongly at 6.1 eV that may arise from sixfold coordinated Ge, (2) when expansion dominates, D2 peak does not decrease at all but long range order changes, detectable by modification of transverse optical (TO) and longitudinal optical (LO) mode intensity. In this case, Ge E ' and Ge(l) dominate and the previous absorption at 6.1 eV disappears. In addition, an absorption peak appears at 3.1 eV from an unknown defect. (c) 2005 Elsevier B.V. All rights reserved.
机译：在Ge：SiO2中测量电子自旋共振（ESR）和紫外线（UV）的光学吸收光谱，该玻璃通过改进的化学气相沉积（MCVD）制成，并由中等能量（10-50 keV）的电子束辐照。像电子能量一样的剂量（几Gem 2）对应于写入光学应用中折射率变化的条件。这些数据产生了有关缺陷总体变化的信息。拉曼光谱法用于将这些变化与微观结构变化相关联。我们指出了一个5.1 eV的吸收漂白现象，令人惊讶的是，在5 eV的激光辐照下发生的漂白与吸收增加了大约（4.4和5.8 eV）。也产生了E′中心。更具体地说，我们在先前的工作中发现了具有较大Ge含量的样品的辐照参数的两个域，其比容增大或减小。因此，我们在本文中精确地指出：（1）当发生压实时，可通过表面形貌下降检测到D2峰强度增加，产生Si E'中心，并且抗磁组分在6.1 eV处会强烈吸收，可能是由于六重配位Ge引起的，（2当扩展占主导地位时，D2峰值根本不会降低，而是长程变化，可通过改变横向光学（TO）和纵向光学（LO）模式强度来检测。在这种情况下，Ge E′和Ge（1）起主导作用，并且先前在6.1eV的吸收消失。此外，由于未知缺陷，在3.1 eV处出现吸收峰。 （c）2005 Elsevier B.V.保留所有权利。

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