Dielectric relaxation of Al/LU2O3/Al thin film structures from 10 mu Hz to 10 MHz

Wiktorczyk T

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Dielectric relaxation of Al/LU2O3/Al thin film structures from 10 mu Hz to 10 MHz

机译：10μHz至10 MHz的Al / LU2O3 / Al薄膜结构的介电弛豫

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Results of dielectric studies of lutetium sesquioxide layers examined in Al/LU2O3/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10(-5)-10(7) Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan delta(f) and also on the complex plane as Cole-Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan delta(U) was examined. Experimental data were analyzed taking into account thin insulating LU2O3 film, near-electrode regions of Al/Lu2O3 and Lu2O3/Al interfaces and series resistance of electrodes and leads. The parameters of LU2O3 film, near-electrode regions and resistance of contacts and leads were determined. (c) 2007 Elsevier B.V. All rights reserved.

机译：报道了在Al / LU2O3 / Al薄膜三明治中检测的倍半氧化oxide层的介电研究结果。介电测量是在10（-5）-10（7）Hz频率范围内以及292 K至500 K的温度范围内进行的。结果以频率函数图的形式显示：电容，介电损耗因子，损耗角正切（f）以及在复平面上作为Cole-Cole图和Nyquist图。研究了外部电压对C（U）和tanδ（U）的影响。分析实验数据时考虑了LU2O3绝缘薄膜，Al / Lu2O3和Lu2O3 / Al界面的近电极区域以及电极和引线的串联电阻。确定了LU2O3膜的参数，近电极区域以及触点和引线的电阻。（c）2007 Elsevier B.V.保留所有权利。

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2007年第51期|共5页
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Wiktorczyk T;
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正文语种 eng
中图分类晶体学;
关键词
devices; dielectric properties; relaxation; electric modulus; films and coatings; surfaces and interfaces; ATOMIC LAYER DEPOSITION; TEMPERATURE; CAPACITORS; DEPENDENCE; THICKNESS;

机译：器件;介电性能;松弛;电模量;薄膜和涂层;表面和界面;原子层沉积;温度;电容器;依赖度;厚度;

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Dielectric relaxation of Al/LU2O3/Al thin film structures from 10 mu Hz to 10 MHz

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