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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Fluorine laser-induced silicon hydride Si-H groups in silica
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Fluorine laser-induced silicon hydride Si-H groups in silica

机译：硅中氟激光诱导的氢化硅Si-H基团

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摘要

Formation and destruction of silicon hydride (Si-H) groups in silica by F, laser irradiation and their vacuum ultraviolet (VUV) optical absorption was examined by infrared (IR) and VUV spectroscopy. Photoinduced creation of Si-H groups in H-2-impregnated oxygen deficient silica is accompanied by a growth of infrared absorption band at 2250 cm(-1) and by a strong increase of VUV transmission at 7.9 eV. Photolysis of Si-H groups by 7.9 eV photons in this glass was not detected when the irradiation was performed at temperature 80 K. However, a slight destruction of Si-H groups under 7.9 eV irradiation was observed at the room temperature. This finding gives a tentative estimate of VUV absorption cross section of Si-H groups at 7.9 eV as 4 x 10(-21) cm(2), showing that Si-H groups do not strongly contribute to the absorption at the VUV fundamental absorption edge of silica glass. (c) 2007 Elsevier B.V. All rights reserved.
机译：通过红外，红外光谱和真空紫外光谱法研究了硅粉中硅的氢化，硅的形成，破坏，激光辐照以及真空紫外（VUV）的光吸收。 H-2浸渍的缺氧二氧化硅中的Si-H基团的光诱导产生伴随着2250 cm（-1）处红外吸收带的增长以及7.9 eV处VUV透射的强烈增加。当在80 K的温度下进行辐照时，在该玻璃中未检测到7.9 eV光子对Si-H基的光解。但是，在室温下，在7.9 eV辐照下，Si-H基的轻微破坏。该发现初步估算了7.9 eV下Si-H基团的VUV吸收截面为4 x 10（-21）cm（2），表明Si-H基团对VUV基本吸收的吸收作用不大。石英玻璃的边缘。 （c）2007 Elsevier B.V.保留所有权利。

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