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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Influence of annealing on the physical properties of filtered vacuum arc deposited tin oxide thin films
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Influence of annealing on the physical properties of filtered vacuum arc deposited tin oxide thin films

机译：退火对过滤的真空电弧沉积氧化锡薄膜物理性能的影响

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Tin oxide (SnO2) thin films were deposited on UV fused silica (UVFS) substrates using filtered vacuum arc deposition (FVAD). During deposition, the substrates were at room temperature (RT). As-deposited films were annealed at 400 and 600 degrees C in Ar for 30 min. The film structure, composition, and surface morphology were determined as function of the annealing temperature using X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns of the SnO2, thin films deposited on substrates at RT indicated that the films were amorphous, however, after the annealing the film structure became polycrystalline. The grain size of the annealed films, obtained from the XRD analysis, increased with the annealing temperature, and it was in the range 8-34 nm. The AFM analysis of the surface revealed an increase in the film surface average grain size from 15 nm to 46 nm, and the surface roughness from 0.2 to 1.8 nm, as function of the annealing temperature. The average optical transmission of the films in the visible spectrum was >80% and increased by the annealing similar to 10%. The films' optical constants in the 250-989 nm wavelength range were determined by variable angle spectroscopic ellipsometry (VASE). The refractive indexes of as-deposited and annealed films were in the range 1.83-2.23 and 1.85-2.3, respectively. The extinction coefficients, k(lambda), of as-deposited and annealed films were in the range same range similar to 0-0.5. The optical energy band gap (E-g), as determined by the dependence of the absorption coefficient on the photon energy at short wavelengths, increased with the annealing temperature from 3.90 to 4.35 eV. The lowest electrical resistivity of the as-deposited tin oxide films was 7.8 x 10(-3) Omega cm, however, film annealing resulted in highly resistive films. (C) 2007 Elsevier B.V. All rights reserved.
机译：使用过滤的真空电弧沉积（FVAD）将氧化锡（SnO2）薄膜沉积在UV熔融石英（UVFS）基板上。在沉积期间，基板处于室温（RT）。将沉积的薄膜在Ar中在400和600摄氏度下退火30分钟。使用X射线衍射（XRD），原子力显微镜（AFM）和X射线光电子能谱（XPS）确定薄膜结构，组成和表面形态与退火温度的关系。在室温下沉积在基板上的SnO2薄膜的XRD图谱表明该薄膜是非晶态的，但是，退火后，薄膜结构变为多晶。通过XRD分析获得的退火膜的晶粒尺寸随着退火温度而增加，并且在8-34nm的范围内。表面的AFM分析表明，作为退火温度的函数，膜表面平均晶粒尺寸从15nm增加到46nm，表面粗糙度从0.2nm增加到1.8nm。薄膜在可见光谱中的平均光学透射率> 80％，并且通过退火提高了类似的10％。通过可变角光谱椭圆偏振法（VASE）确定膜在250-989nm波长范围内的光学常数。沉积和退火膜的折射率分别在1.83-2.23和1.85-2.3的范围内。沉积和退火的膜的消光系数k（λ）在与0-0.5相似的范围内。由吸收系数对短波长的光子能量的依赖性所确定的光能带隙（E-g）随着退火温度从3.90 eV升高而增加。沉积的氧化锡膜的最低电阻率为7.8 x 10（-3）Ω厘米，但是，膜退火导致了高电阻膜。 （C）2007 Elsevier B.V.保留所有权利。

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