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On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

机译:掺Er的Ge-S-Ga玻璃的光吸收和光致发光

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摘要

We have studied the absorption and photoluminescence (PL) of (GeS2)80(Ga2S3)20 glasses doped with 0.17, 0.35 and 1.05 at.% Er. The sharp bands centered at around 660, 810, 980 and 1540 nm in the absorption spectra can be associated with intra 4f-shell transitions in Er3+ ions from 4I15/2 level to 4F9/2, 4I9/2, 4I11/2 and 4I13/2 levels, respectively. It has been observed that the absorption edge shifts towards lower energies with increasing Er concentration. A decrease in the absorption coefficient in the range of weak absorption, as well as the host luminescence in more heavily doped samples has been established, which may be associated with less native defects in the glassy structure. The role of excitation wavelength (λex) on the PL emission band at 1540 nm using different Er3+-doping level has been evaluated. It has been found that the total PL band remains almost the same under direct excitation of Er3+ ions (at λex = 644, 770 and 982 nm), while it becomes narrower under the host excitation (at λex = 532 nm).
机译:我们研究了掺有0.17、0.35和1.05 at。%Er的(GeS2)80(Ga2S3)20玻璃的吸收和光致发光(PL)。在吸收光谱中集中在660、810、980和1540 nm附近的锐带可能与Er3 +离子中从4I15 / 2能级到4F9 / 2、4I9 / 2、4I11 / 2和4I13 /的4f壳内跃迁有关2个级别。已经观察到,随着Er浓度的增加,吸收边缘向较低的能量移动。已经确定了在弱吸收范围内吸收系数的降低,以及在重度掺杂样品中的主体发光,这可能与玻璃状结构中的天然缺陷较少有关。评估了使用不同的Er3 +掺杂水平,激发波长(λex)在1540 nm的PL发射带上的作用。已经发现,在Er3 +离子的直接激发下(λex= 644、770和982 nm),总PL谱带几乎保持不变,而在主体激发下(λex= 532 nm),PL谱带变得更窄。

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