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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >GeO2 based high k dielectric material synthesized by sol-gel process
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GeO2 based high k dielectric material synthesized by sol-gel process

机译：溶胶-凝胶法合成GeO2基高k介电材料

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Recently, there has been lot of research on new high dielectric constant (high k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high k materials, such as high dielectric constant, thermal stability (400 degrees C or higher), high mechanical strength, and good adhesion to neighboring layers. Keeping in view the properties required for the replacement of existing SiO2 dielectrics, new high k dielectric material based on GeO2 has been synthesized. Polycrystalline GeO2 thin films have been deposited by simple, and cost effective sol-gel spin coating process. The obtained xerogel films of germanium oxide have been annealed at 400 degrees C, 600 degrees C and 800 degrees C for 3 h in argon atmosphere. Elemental composition, morphology, and phase analysis have been measured by employing X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction techniques, respectively. The formation of the hexagonal GeO2 phase at and above 400 degrees C has been reported. The composition of the annealed films have been measured and found to be 68 at.% of O, 32 at.% of Ge for GeO2, which are close to the stoichiometry of the GeO2. (c) 2007 Elsevier B.V. All rights reserved.
机译：最近，对于用于下一代超大规模集成电路（ULSI）的新型高介电常数（high k）材料进行了大量研究。对新的高k材料有许多要求，例如高介电常数，热稳定性（400摄氏度或更高），高机械强度以及对相邻层的良好粘合性。考虑到替换现有SiO 2电介质所需的特性，已经合成了基于GeO 2的新的高k电介质材料。多晶GeO2薄膜已通过简单且经济高效的溶胶-凝胶旋涂工艺沉积。将获得的氧化锗干凝胶膜在氩气氛中分别在400℃，600℃和800℃下退火3小时。元素组成，形态和相分析已分别通过采用X射线光电子能谱，扫描电子显微镜和X射线衍射技术进行了测量。已经报道了在400℃以上的温度下形成六方GeO 2相。已经测量了退火膜的组成，发现对于GeO 2，其为68at。％的O，32at。％的Ge，其接近于GeO 2的化学计量。 （c）2007 Elsevier B.V.保留所有权利。

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