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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route
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Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route

机译：溶胶-凝胶法制备的SnO2薄膜的稀土中心性质和电子俘获

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摘要

Some very relevant optical. electrical, and structural properties of SnO2 doped with rare-earth ions Er3+ and Eu3+ are presented. Films are produced by the sol-gel-clip coating process, and may be described as a combination of nanoscopic dimension crystallites (about 3-10 nm) with their respective intergrain potential barriers. The Er3+ and Eu3+ ions are expected to act as acceptors in SnO2. which is a natural n-type conductor, inducing a high degree of charge compensation. Electron trapping and emission spectra data are presented and are rather distinct, depending on the location of the rare-earth impurity. This behavior allows the identification of two distinct centers: located either in the SnO2 lattice or segregated at the particles surface. Based on a model for thermally activated cross-section defects, the difference between the capture energy of the photo-excited electron and the intergrain potential barrier is evaluated, leading to distinct values for high and low symmetry sites. A higher distortion in the lattice of undoped SnO2 and SnO2:Eu (1 at.%) was evaluated from Rieuveld refinements of X-ray diffraction data. This was confirmed by Raman spectra, which are associated with the particles size and disorder. By comparing the samples with the same doping concentration, it was found that this disorder is higher in Eu-doped SnO2 than in Er-doped SnO2, which is in agreement with a higher energy for the lattice relaxation in the trapping process by Eu3+ centers.
机译：一些非常相关的光学。介绍了掺有稀土离子Er3 +和Eu3 +的SnO2的电学和结构性能。薄膜是通过溶胶-凝胶-夹层涂覆工艺生产的，可以描述为纳米级晶粒（约3-10 nm）及其各自的晶间势垒的组合。 Er3 +和Eu3 +离子有望在SnO2中充当受体。它是自然的n型导体，可引起高度的电荷补偿。根据稀土杂质的位置，给出了电子俘获和发射光谱数据，并且数据非常不同。此行为可以识别两个不同的中心：位于SnO2晶格中或隔离在颗粒表面。基于热激活截面缺陷的模型，评估了光激发电子的俘获能量与晶间势垒之间的差，从而得出了高对称位和低对称位的不同值。根据X射线衍射数据的Rieuveld改进，评估了未掺杂的SnO2和SnO2：Eu的晶格中较高的畸变率（1 at。％）。拉曼光谱证实了这一点，该光谱与颗粒尺寸和无序有关。通过比较具有相同掺杂浓度的样品，发现在Eu掺杂的SnO2中这种无序性比Er掺杂的SnO2中的无序性高，这与Eu3 +中心在俘获过程中晶格弛豫的能量更高有关。

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