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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Cw argon laser crystallization of silicon films: Structural properties
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Cw argon laser crystallization of silicon films: Structural properties

机译：连续氩弧激光结晶硅膜的结构性质

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摘要

This paper deals with the structural characterization of amorphous silicon films deposited on glass in the amorphous state and then post-crystallized using a continuous wave argon laser. In opposite to the excimer laser crystallization method, the processing window is wider. Due to the low cooling rate induced by the continuous irradiation, very large grains are obtained. With an epitaxial growth induced by an adequate overlapping of the laser traces, grains as large as 100 mu m can be reached. Electron back-scattered diffraction analysis highlights the single crystalline character of the large size grains crystallized with this kind of laser. The technique is able to produce large area single crystalline regions, suitable to fabricate high speed circuits. (c) 2006 Published by Elsevier B.V.
机译：本文研究了非晶态硅膜的结构特征，该非晶态硅膜沉积在玻璃上时处于非晶态，然后使用连续波氩激光进行后结晶。与准分子激光结晶方法相反，处理窗口更宽。由于连续照射引起的低冷却速率，获得了非常大的晶粒。由于激光迹线的充分重叠而引起的外延生长，可以达到100微米的晶粒。电子背散射衍射分析突出显示了用这种激光器结晶的大尺寸晶粒的单晶特征。该技术能够产生大面积的单晶区域，适合于制造高速电路。 （c）2006年由Elsevier B.V.发布

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