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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Morphological transformation and kinetic analysis in the aluminum-mediated a-Si : H crystallization
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Morphological transformation and kinetic analysis in the aluminum-mediated a-Si : H crystallization

机译：铝介导的a-Si：H结晶的形态转变和动力学分析

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摘要

We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 degrees C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t(2) dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the pc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrarm equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured V-g = 7.2 x 10(-3) mu m/min is a direct consequence of the low annealing temperature applied (250 degrees C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the mu c-S:H films. (c) 2005 Elsevier B.V. All rights reserved.
机译：我们分析了通过在数小时内于低温（250摄氏度）下对Al / a-Si：H系统进行退火处理而导致的a-Si：H膜的非晶-晶体形态转变。光学显微照片显示出在无定形基质上形成的Si核的生长，以及这些晶粒的平均面积的t（2）依赖性，表明存在二维增长。还考虑了结晶时间与退火时间的关系，研究了pc-Si：H薄膜中的生长动力学。 Avrarm方程的应用很好地描述了这种形态和结构转换过程中的实验结果。测量的低生长速度V-g = 7.2 x 10（-3）μm / min是所施加的低退火温度（250摄氏度）的直接结果，这降低了硅在Al / a-Si：H界面上的扩散。红外反射率测量结果显示，随着退火时间的延长，Si-H摆动模式的强度相对降低，这表明氢向mu c-S：H膜的表面渗出。 （c）2005 Elsevier B.V.保留所有权利。

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