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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Single oscillator energy and dispersion energy of uniform thin chalcogenide films from Cu–As–S–Se system
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Single oscillator energy and dispersion energy of uniform thin chalcogenide films from Cu–As–S–Se system

机译：Cu-As-S-Se系统中均匀硫属化物薄膜的单振子能量和分散能

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摘要

This paper presents some of the results obtained by using the modified envelope method, which takes substrate absorption into account. Samples investigated in this paper are the series of amorphous thin chalcogenide uniform films from system Cux[As2(S0.5Se0.5)3]100-x. Thin films were deposited under vacuum on glass substrates by thermal evaporation technique, from previously synthesized bulk samples. The dispersion of the refractive index is discussed in terms of the single oscillator model proposed by Wemple and DiDomenico. By using this model, i.e. by plotting (n2 - 1)-1 against (hω)2 and fitting a straight line, oscillator parameters, E0 – the single oscillator energy and Ed – the dispersion energy, were directly determined.
机译：本文介绍了使用改进的包络法获得的一些结果，该方法考虑了底物的吸收。本文研究的样品是来自系统Cux [As2（S0.5Se0.5）3] 100-x的一系列非晶态硫族化物均匀薄膜。通过热蒸发技术从先前合成的大块样品中在真空下将薄膜沉积在玻璃基板上。根据Wemple和DiDomenico提出的单振荡器模型讨论了折射率的色散。通过使用该模型，即相对于（hω）2绘制（n2-1）-1并拟合直线，可直接确定振荡器参数E0（单振荡器能量）和Ed（色散能量）。

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