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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films
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Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

机译：锗对共晶Sb70Te30薄膜光学和电学性质的影响

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摘要

The aim of this work is to study the influence of Ge addition on the optical and electrical properties in eutectic SbTe thin films (with the compositions: Sb70Te30, Ge2Sb70Te28, Ge5Sb70Te25 and Ge10Sb65Te25) using visible optical reflectance, ellipsometry measurements, near infrared transmittance spectra, and four probe electrical resistivity measurements. From near infrared transmittance measurements the optical band gap was determined using Tauc’s expression for amorphous materials, a value of about 0.47 eV was obtained without any clear dependence on the Ge content. All amorphous films have approximately the same reflectance value, however the contrast ratio between the crystalline and amorphous phases decrease with increase of Ge. Using in situ four probe measurements versus temperature the dependence of the activation energy of conductance and the onset of the crystallization temperature have been determined for different materials. Four probe measurements have shown that the resistivity of amorphous films increases with increase of Ge. The results obtained have shown that optical and electrical properties of SbTe films with near eutectic composition change with the Ge content and depending on the application, in either optical or electrical memory devices, the most suitable composition needs to be determined.
机译：这项工作的目的是使用可见光反射率，椭圆光度法测量，近红外透射光谱，研究共晶SbTe薄膜（成分：Sb70Te30，Ge2Sb70Te28，Ge5Sb70Te25和Ge10Sb65Te25）中锗的添加对光学和电学性质的影响，和四个探针电阻率测量。通过近红外透射率测量，使用Tauc表示的非晶态材料确定了光学带隙，获得了约0.47 eV的值，而与Ge含量没有明显的相关性。所有非晶膜具有近似相同的反射率值，但是结晶相和非晶相之间的对比度随Ge的增加而降低。使用原位四个探针测量值与温度的关系，已确定了不同材料的电导活化能和结晶温度开始的依赖性。四个探针测量表明，非晶膜的电阻率随Ge的增加而增加。获得的结果表明，具有近共晶组成的SbTe膜的光学和电学性质随Ge含量而变化，并且取决于应用，在光学或电存储器件中，需要确定最合适的组成。

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