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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Microstructure and electrical properties of Tb-doped zinc oxide-based ceramics
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Microstructure and electrical properties of Tb-doped zinc oxide-based ceramics

机译：掺b氧化锌基陶瓷的微观结构和电性能

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摘要

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based ceramics were investigated for different Tb4O7 amounts. The increase of Tb4O7 amount led to more densified ceramics, increasing from 5.73 to 5.85 g/cm(3) in sintered density. The average grain size decreased from 13.1 to 5.0 mu m with the increase of Tb4O7 amount. It increased in the range of 8.9-42.0 in the nonlinear coefficient and in the range of 1026-6514 V/cm in the breakdown field. The highest nonlinear coefficient (42) was obtained for 1.0 mol% Tb4O7. As Tb4O7 amount increased, the donor density decreased in the range of 1.23 x 10(18)-0.70 x 10(18)/cm(3), whereas the barrier height at grain boundaries increased in the range of 0.73-0.93 eV. (c) 2007 Elsevier B.V. All rights reserved.
机译：研究了不同Tb4O7用量的Zn-Pr-Co-Cr-Tb氧化物基陶瓷的微观结构和电性能。 Tb4O7数量的增加导致陶瓷密度更高，烧结密度从5.73增加到5.85 g / cm（3）。随着Tb4O7含量的增加，平均晶粒度从13.1微米减小到5.0微米。非线性系数在8.9-42.0范围内增加，击穿电场在1026-6514 V / cm范围内增加。对于1.0mol％的Tb4O7，获得最高的非线性系数（42）。随着Tb4O7量的增加，施主密度在1.23 x 10（18）-0.70 x 10（18）/ cm（3）的范围内降低，而晶界处的势垒高度在0.73-0.93 eV的范围内增加。 （c）2007 Elsevier B.V.保留所有权利。

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