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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Differential etching of chalcogenides for infrared photonic waveguide structures
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Differential etching of chalcogenides for infrared photonic waveguide structures

机译：用于红外光子波导结构的硫族化物的差分刻蚀

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摘要

Chemical etching rates for two different chalcogenide glass compositions, AS(40)S(60) and AS(24)S(38)Se(38), were studied using sodium hydroxide based etchant solutions. Etching was performed using a variation of standard photolithographic masking and wet-etching techniques. Variations in etch rate with NaOH concentration and glass composition were observed. The depth of etch was characterized using an optical profilometer. Etch rate differences as large as three orders of magnitude between these two glasses were observed at low NaOH concentration (0.053 M). We present a single variable etch rate curve of etch depth per time (nm/s) versus NaOH overall solution concentration (in M) for these two different chalcogenide glasses. This technology shows promise for fabricating photonic structures and has potential applications in fabricating novel photonic bandgap structures that will function in the long-wave infrared (LWIR) regime. Published by Elsevier B.V.
机译：使用基于氢氧化钠的蚀刻剂溶液研究了两种不同的硫族化物玻璃组合物AS（40）S（60）和AS（24）S（38）Se（38）的化学蚀刻速率。使用标准光刻掩模和湿蚀刻技术的变体进行蚀刻。观察到蚀刻速率随NaOH浓度和玻璃组成的变化。使用光学轮廓仪表征蚀刻深度。在低NaOH浓度（0.053 M）下观察到这两块玻璃之间的蚀刻速率差异高达三个数量级。对于这两种不同的硫族化物玻璃，我们给出了每时间蚀刻深度（nm / s）与NaOH总溶液浓度（以M为单位）的单一可变蚀刻速率曲线。该技术显示出制造光子结构的希望，并在制造新颖的能在长波红外（LWIR）体制下发挥作用的光子带隙结构方面具有潜在的应用。由Elsevier B.V.发布

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