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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Characteristics of heteroepitaxial CU2-xMnxO/Nb-SrTiO3 p-n junction
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Characteristics of heteroepitaxial CU2-xMnxO/Nb-SrTiO3 p-n junction

机译：异质外延CU2-xMnxO / Nb-SrTiO3 p-n结的特征

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Mn-doped cuprous oxide CU2-xMnxO (CMO), where x = 0.03, is a p-type diluted magnetic semiconductor (DMS) with Curie temperature above room temperature [M. Wei, N. Braddon, et al., Appl. Phys. Lett. 86 (2005) 0725141; Y.L. Liu, S. Harrington, et al., Appl. Phys. Lett. 87 (2005) 222108]. We have grown CMO (x = 0.03) thin films of about 200 nm thick on n-type semiconducting (001)Nb-SrTiO3(NSTO) single crystal substrates by pulsed laser deposition. Cubic crystalline phases of CMO layers were obtained in a narrow deposition pressure window of about 20 mTorr at growth temperature of 650 degrees C. X-ray diffraction and TEM studies of these heterostructures reveal a cube-on-cube epitaxial relationship of [CMO](001)/[NSTO](001). All the oxide p-n junctions with the size of 500 x 500 mu m were fabricated by the shadow masking technique. These junctions show highly asymmetric I-V characteristics. The rectification ratio at room temperature is about 10(3) at +/- 2 V. Leakage current density of 10(-4) A cm(-2) at - 1 V is observed. No apparent unction breakdown is recorded at reverse bias voltages down to -5 V. From the 1/C-2-V plots, the forward bias turn on voltage is similar to 1.4 V. Clear junction current rectifying property is maintained at up to 200 degrees C. Our results have demonstrated that epitaxial CMO films can be fabricated on lattice matched cubic substrates. They are suitable DMS for above room temperature spintronic junction applications. (c) 2008 Elsevier B.V. All rights reserved.
机译：Mn掺杂的氧化亚铜CU2-xMnxO（CMO），其中x = 0.03，是居里温度高于室温[M.]的p型稀磁半导体（DMS）。 Wei，N.Braddon，等人，Appl.Chem.Soc。，2004，48，2257。物理来吧86（2005）0725141; Y.L. Liu，S.Harrington，等人，Appl.Environ。物理来吧87（2005）222108]。我们已经通过脉冲激光沉积在n型半导体（001）Nb-SrTiO3（NSTO）单晶衬底上生长了约200 nm厚的CMO（x = 0.03）薄膜。在约650 mC的生长温度下，在约20 mTorr的狭窄沉积压力窗口中获得了CMO层的立方晶相。这些异质结构的X射线衍射和TEM研究表明[CMO]（ 001）/ [NSTO]（001）。所有500-500μm尺寸的氧化物p-n结都是通过荫罩技术制造的。这些结表现出高度不对称的I-V特性。在+/- 2 V时，室温下的整流比约为10（3）。在-1 V时观察到10（-4）A cm（-2）的漏电流密度。在低至-5 V的反向偏置电压下，没有记录到明显的功能击穿。从1 / C-2-V图可知，正向偏置导通电压类似于1.4V。透明结电流整流性能可保持在200我们的结果表明，可以在晶格匹配的立方基板上制造外延CMO膜。它们是适用于室温以上自旋电子结应用的DMS。 （c）2008 Elsevier B.V.保留所有权利。

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