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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering
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Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

机译：RF溅射生长未掺杂和（Mn，In）掺杂的SnO2薄膜的结构研究

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Undoped and 5%(Mn, In)-doped SnO2 thin films were deposited on Si(1 0 0) and Al2O3 (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity, was used to determine the films thickness (10-130 nm) and roughness (similar to 1 nm). The combination of X-ray diffraction and Mossbauer techniques evidenced the presence of Sn4+ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO2 for annealed films. As the deposition power, substrate temperature or O-2 proportion are increased, SnO2 nanocrystals are formed. Epitaxial SnO2 films are obtained on Al2O3 at 550 degrees C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.
机译：通过RF磁控溅射以不同的沉积功率，溅射气体混合物和衬底温度在Si（1 0 0）和Al2O3（R-cut）上沉积未掺杂和5％（Mn，In）掺杂的SnO2薄膜。 X射线反射率用于确定膜的厚度（10-130nm）和粗糙度（类似于1nm）。 X射线衍射和Mossbauer技术的结合证明了在非晶态环境中存在Sn4 +，用于在低功率和温度下获得的成膜薄膜，以及用于退火薄膜的结晶SnO2的形成。随着沉积能力，基板温度或O-2比例的增加，形成SnO2纳米晶体。在550℃的Al 2 O 3上获得外延SnO 2膜。非晶膜非常均匀，但是检测到更大的柱状生长以增加沉积能力。没有检测到第二相或掺杂剂分离。

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