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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >ac conductivity in a-Ge–Se–Bi glasses
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ac conductivity in a-Ge–Se–Bi glasses

机译：AC conductivity in啊-GE–S俄–BI glasses

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摘要

In the present paper the effect of Bi impurity (low 4 at.% and high 10 at.%) on the ac conductivity (σac) of a-Ge20Se80 glassy alloy is studied and the experimentally deduced values are fitted with theoretically deduced values by using correlated barrier hopping model (CBH). Frequency dependent ac conductance of the samples over a frequency range of 100–50 kHz has been taken in the temperature range (268–360 K). At frequency 2 kHz and temperature 298 K, the value of ac conductivity (σac) decreases at low concentration of Bi (4 at.%). However, the value of σac increases at higher concentration of Bi (10 at.%). The ac conductivity is proportional to ωs for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes at low and high concentration of Bi impurity.
机译：本文研究了Bi杂质（低4 at。％和高10 at。％）对a-Ge20Se80玻璃态合金的ac电导率（σac）的影响，并通过实验拟合了理论推导值相关障碍跳跃模型（CBH）。在温度范围（268–360 K）中，已在100–50 kHz的频率范围内获取了样品的随频率变化的交流电导。在2 kHz的频率和298 K的温度下，当Bi的浓度低（4 at。％）时，交流电导率（σac）的值减小。但是，在较高的Bi浓度（10 at。％）下，σac的值会增加。对于未掺杂和掺杂样品，交流电导率与ωs成正比。频率指数的值随温度升高而降低。这些结果已经根据在低和高浓度的Bi杂质下的一些结构变化进行了解释。

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