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Atomic structure and short- and medium-range order parameters in amorphous chalcogenide films prepared by different methods

机译:不同方法制备的非晶硫族化物薄膜的原子结构和中短程参数

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摘要

The atomic structure of amorphous As2Se3 and As2S3 films prepared by thermal evaporation in a vacuum and by RF ion-plasma sputtering has been studied by the methods of X-ray diffraction and Raman spectroscopy. The techniques of film preparation had different conditions of substance vaporization and atom condensation on a substrate. It has been established that films prepared by these methods have significant differences in the dimensions of the medium-range order and in the local atomic structure, which causes considerable differences in their electronic properties.
机译:通过X射线衍射和拉曼光谱法研究了通过真空热蒸发和RF离子等离子体溅射制备的非晶态As2Se3和As2S3薄膜的原子结构。薄膜制备技术在基材上具有不同的物质汽化和原子凝聚条件。已经确定,通过这些方法制备的膜在中程级的尺寸和局部原子结构上具有显着的差异,这导致其电子性质的显着差异。

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