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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Irradiation effects on the OH-related infrared absorption band in synthetic wet silica
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Irradiation effects on the OH-related infrared absorption band in synthetic wet silica

机译：辐射对合成湿法二氧化硅中与OH相关的红外吸收带的影响

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The effects of beta-irradiation on the OH-related infrared (IR) absorption band in synthetic wet silica samples have been investigated by Fourier transform infrared spectroscopy. Depending on the accumulated doses, P-irradiation affects different zones of the IR composite band at about 3670 cm(-1), assigned to the OH stretching modes of silanol groups. These modifications are independent of the original OH content. The results are discussed considering possible radiation-induced changes of the silanol bonding configuration and of the glass network. These are monitored by revealing the IR band a 2260 cm(-1), which is related to the distribution of Si-O-Si bond angle. We have identified the existence of two regimes as a function of radiation dose; low radiation doses produce the reduction of the Si-OH hydrogen-bonded states in favor of the isolated ones, while the opposite effect is observed at higher doses, where the formation of H-bonded pairs seems to be favored. (c) 2007 Elsevier B.V. All rights reserved.
机译：已通过傅立叶变换红外光谱法研究了β辐照对合成湿法二氧化硅样品中OH相关的红外（IR）吸收带的影响。根据累积的剂量，P辐射会影响IR复合材料带的不同区域，大约3670 cm（-1），分配给硅烷醇基团的OH拉伸模式。这些修饰与原始OH含量无关。考虑到可能的辐射诱导的硅烷醇键合构型和玻璃网络的变化，讨论了结果。通过显示2260 cm（-1）的IR波段来监视这些波段，该波段与Si-O-Si键角的分布有关。我们已经根据辐射剂量确定了两种方案的存在。低辐射剂量可降低Si-OH氢键合态，有利于分离态，而高剂量时则可观察到相反的效果，在这种情况下，氢键合对的形成似乎更为有利。 （c）2007 Elsevier B.V.保留所有权利。

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