Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties

Cherpak V; Stakhira P; Hotra Z; Aksimentyeva O; Tsizh B; Volynyuk D; Bordun I

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Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties

机译：真空沉积聚（邻甲氧基苯胺）薄膜：结构和电子性能

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Thin poly(o-methoxyaniline) (POMA) films have been formed by thermovacuum deposition in the temperature range of 350-450 degrees C and at a pressure of 5 x 10(-5) Torr. The structure properties of vacuum deposited POMA films according to FTIR and UV-VIS spectra are similar to those observed for the emeraldine form of polyaniline. Current-voltage characteristics (I-V) of sandwichtype device ITO/POMA/A1 possess rectifying properties with the ideality factor approximate to 4 at room temperature. On the basis of the dependence of conductivity on frequency in the frequency range of 10 Hz to 1 MHz, it is shown that the Pollack-Pohl current flow hopping mechanism dominates in a polymer film: Such mechanism is typical of non-ordered systems. (c) 2008 Elsevier B.V. All rights reserved.

机译：薄的聚（邻甲氧基苯胺）（POMA）薄膜是通过在350-450摄氏度的温度范围内，在5 x 10（-5）托的压力下进行热真空沉积而形成的。根据FTIR和UV-VIS光谱真空沉积的POMA薄膜的结构性质与聚苯胺的翡翠形式观察到的相似。夹层型器件ITO / POMA / A1的电流-电压特性（I-V）具有整流特性，在室温下的理想因子约为4。根据电导率对10 Hz到1 MHz频率范围内频率的依赖性，可以证明Pollack-Pohl电流跳变机制在聚合物膜中占主导地位：这种机制是非有序系统的典型特征。（c）2008 Elsevier B.V.保留所有权利。

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2008年第39期|共5页
作者
Cherpak V; Stakhira P; Hotra Z; Aksimentyeva O; Tsizh B; Volynyuk D; Bordun I;
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正文语种 eng
中图分类晶体学;
关键词
films and coatings; POLYANILINE FILMS; CONDUCTIVITY; DERIVATIVES; INJECTION;

机译：薄膜和涂料;聚氰胺薄膜;导电性;衍生物;注射;

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1. Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties [J] . Cherpak V, Stakhira P, Hotra Z, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2008,第35a39期

机译：真空沉积聚（邻甲氧基苯胺）薄膜：结构和电子性能
2. VACUUM-DEPOSITED POLY(P-PHENYLENE) THIN FILM AND ITS STRUCTURE, MORPHOLOGY AND ELECTRONIC PROPERTIES [J] . Miyashita K., Kaneko M. Synthetic Metals . 1995,第2期

机译：真空沉积聚乙烯对苯薄膜及其结构，形貌和电子性质
3. Correlation between Microstructure and Electronic Property of Solar-Grade Poly-Si Thin-Films Deposited on Textured Substrates [J] . R. Muhida, T. Matsui, T. Kawamura, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2003,第0期

机译：织构基板上沉积的太阳能级多晶硅薄膜的微观结构与电子性能的相关性
4. Correlation between Microstructure and Electronic Property of Solar-Grade Poly-Si Thin-Films Deposited on Textured Substrates [C] . R. Muhida, T. Matsui, T. Kawamura, International semiconductors conference . 2003

机译：纹理底板上太阳能级多Si薄膜微观结构与电子性能的相关性
5. A study of optical and electronic properties of a semiconducting polymer, poly(o-methoxyaniline). [D] . Shrestha, Roshan Prasad. 2006

机译：对半导体聚合物聚（邻甲氧基苯胺）的光学和电子性质的研究。
6. Polymeric Thin Films for Organic Electronics: Properties and Adaptive Structures [O] . Sebastiano Cataldo, Bruno Pignataro 2013

机译：有机电子聚合物薄膜：性能和自适应结构
7. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion [O] . Marletta, Alexandre, Silva, Silésia de Fátima Curcino da, Piovesan, Erick, 2013

机译：通过沉积在带电聚（邻甲氧基苯胺）垫上的逐层薄膜中聚（对亚苯基亚乙烯基）的结构控制
8. Properties of vacuum-deposited thin-film nichrome resistors [R] . Caruso, S. V., De Haye, R. F. 1967

机译：真空沉积薄膜镍铬电阻器的特性

Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties

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