Calculations of threshold voltage, which starts up transformation of active region in memory device from amorphous to crystalline state in phase-change random access memory, are reported. The calculations are based on the assumption that the emission of holes from the traps stimulates switching by forming conductive channel between electrodes. The results obtained by calculation correlate with the experimental data and the data reported in literature. (C) 2007 Elsevier B.V. All rights reserved.
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