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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Photoelectrical properties of (Sb15As30Se55)(100-x)Te-x (0 <= x <= 12.5 at.%) thin films
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Photoelectrical properties of (Sb15As30Se55)(100-x)Te-x (0 <= x <= 12.5 at.%) thin films

机译：（Sb15As30Se55）（100-x）Te-x（0 <= x <= 12.5 at。％）薄膜的光电性能

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This paper reports photoelectrical properties of (As30Sb15Se55)(100-x)Te-x amorphous chalcogenide films (0 <= x <= 12.5 at.%) through measurements of 'steady state' and 'transient' photocurrents. The composition dependence of the steady state photocurrent at room temperature shows that the photoconductivity increases while the photosensitivity decreases with increasing Te content. A study of photoconductivity of (As30Sb15Se55)(100-x)Te-x at different levels of light intensity reveals that, the photoconductivity increases exponentially with increase in light intensity. The Photocurrent (I-ph) when plotted against light intensity (G) follows a power law (I-ph = G(gamma)) the exponent gamma for (As30Sb15Se55)(100-x)Te-x films has been found nearly 0.5 suggesting bimolecular recombination. The transient photoconductivity shows that the lifetime of the carrier decreases with increasing the light intensity. This decrease suggests that the photoconductivity mechanism in our samples was controlled by the transition trapping processes. The increase of Te content results in a monotonic decrease in the band gap and the free carrier life time of (As30Sb15Se55)(100-x)Te-x thin films. These results were interpreted on the basis of the chemical-bond approach. (C) 2007 Elsevier B.V. All rights reserved.
机译：本文通过测量“稳态”和“瞬态”光电流，报告了（As30Sb15Se55）（100-x）Te-x非晶硫族化物膜（0 <= x <= 12.5 at。％）的光电性能。室温下稳态光电流的成分依赖性表明，随着Te含量的增加，光导率增加而光敏度下降。对（As30Sb15Se55）（100-x）Te-x在不同光强度下的光电导性的研究表明，光电导率随光强度的增加呈指数增长。相对于光强度（G）绘制的光电流（I-ph）遵循幂定律（I-ph = G（γ））（As30Sb15Se55）（100-x）Te-x膜的指数gamma已发现近0.5提示双分子重组。瞬时光电导性表明，载体的寿命随着光强度的增加而降低。这种下降表明我们样品中的光电导机理是由过渡俘获过程控制的。 Te含量的增加导致（As30Sb15Se55）（100-x）Te-x薄膜的带隙和自由载流子寿命单调减少。这些结果是根据化学键方法进行解释的。 （C）2007 Elsevier B.V.保留所有权利。

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