'SiO2, advanced dielectrics, and related devices': Suggestions for SiO2 research

Weeks RA

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >'SiO2, advanced dielectrics, and related devices': Suggestions for SiO2 research

【24h】

'SiO2, advanced dielectrics, and related devices': Suggestions for SiO2 research

机译：“ SiO2，高级电介质和相关设备”：有关SiO2研究的建议

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Now that the seventh conference in this series is history, the accepted papers are published in this volume of Journal of Non-Crystalline Solids. As in the preceding conferences, the papers presented, oral and poster, indicate that this conference continues the excellent quality of the series. The papers that have been accepted for publication are a contribution to the scientific literature and increase our knowledge about SiO2 and related dielectrics. Many of the papers that were not accepted will be revised and published in the future.

机译：既然本系列的第七次会议已经成为历史，那么已接受的论文已在非晶体固体杂志的这一卷中发表。与前面的会议一样，所发表的论文（口头报告和海报）表明，这次会议延续了该系列作品的卓越品质。已被接受发表的论文为科学文献做出了贡献，并增加了我们对SiO2和相关电介质的了解。许多未被接受的论文将在将来进行修订和发表。

著录项

来源
《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2009年第21期|共3页
作者
Weeks RA;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类非晶态和类晶态;
关键词
INTERSTITIAL OXYGEN MOLECULES; OPTICAL-ABSORPTION; IRRADIATED QUARTZ; VITREOUS SILICA; ALPHA-QUARTZ; GLASSY SIO2; E' CENTERS; DEFECTS; PHOTOLUMINESCENCE; RELAXATION;

机译：间质氧分子;光吸收;辐照石英;玻璃硅;α-石英;玻璃粉;E'中心;缺陷;光致发光;松弛;

相似文献

外文文献
中文文献
专利

1. 'SiO2, advanced dielectrics, and related devices': Suggestions for SiO2 research [J] . Weeks RA Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2009,第18a21期

机译：“ SiO2，高级电介质和相关设备”：有关SiO2研究的建议
2. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics [J] . Journal of Applied Physics . 2014,第7期

机译：具有HfSiON / SiO2栅极电介质的p型金属氧化物半导体器件中的正偏置温度不稳定性
3. Analysis of electrical, dielectric and thermal performance of NiFe/SiO2/Si MOS device fabricated by liquid phase epitaxy [J] . Ashery Adel, Khabiri Gomaa, Hassan Abdelwahab, Materials science in semiconductor processing . 2019,第期

机译：液相外延制造NiFe / SiO2 / Si MOS装置的电气，电介质和热性能分析
4. Gate dielectrics for advanced semiconductor devices: thermally-grown SiO2 - a very difficult act to follow [C] . Gerald Lucovsky International Symposium on the Physics and Chemistry of SiOb2s and the Si-SiOb2s Interface . 2005

机译：高级半导体器件的栅极电介质：热生长的SiO2 - 一种非常困难的行为
5. Study of Conduction Behavior in Dielectrics in Chip Level Interconnects: Detection of Defects in Al/SiO2 Interconnects [D] . Lu, Po-Cheng. 2018

机译：芯片级互连中电介质中导电行为的研究：Al / SiO2互连中缺陷的检测
6. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer [O] . Kuan-Chang Chang, Jen-wei Huang, Ting-Chang Chang, 2013

机译：使用多孔SiO2缓冲层的Zr：SiO2 RRAM器件的空间电场集中效应
7. Growth of rare-earth doped oxyde nanoparticles in silica fibers", 9th Symposium "SiO2: Advanced Dielectrics and Related Devices [O] . Mauroy Valérie, Blanc Wilfried, Ude Michèle, 2012

机译：二氧化硅纤维中掺稀土氧化物纳米粒子的生长”，第九届研讨会“ SiO2：先进的介电及相关器件
8. International Workshop of Device Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics [R] . Baumvol, I. 2001

机译：国际器件技术研讨会：用于未来硅基微电子的siO2作为栅介质的替代品

'SiO2, advanced dielectrics, and related devices': Suggestions for SiO2 research

摘要

著录项

相似文献

相关主题

期刊订阅