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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Seebeck effect in disordered low dimensional interface structures
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Seebeck effect in disordered low dimensional interface structures

机译：无序低维界面结构中的塞贝克效应

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摘要

We have studied the physical and chemical interaction at the interface of amorphous Sb and Cu, by means of measurements of the Seebeck coefficient, S, and the resistance per square, R_square. The solid interfaces were prepared in situ using a quenching technique near liquid He temperature. We have observed a thickness as well as temperature dependence of S of the Cu/Sb interface at Cu thickness<3 nm. In this thickness range the low temperature (< 150 K) slope of S, S/T|_(T -> 0), increases when reducing the Cu coverage. For thicknesses > 3 nm an opposite effect is observed. In this region S/T|_(T -> 0) increases with increasing Cu thickness, but the Ss are much smaller than for thicknesses < 3 nm. These dependences of S/T|_(T -> 0) are discussed taking into account the thermopower of three-dimensional Cu_xSb_(1-x) alloys and polycrystalline Cu films. Evidence has been found that for Cu thickness < 3 nm the chemical interaction at the interface forms a homogeneous amorphous CuSb alloy.
机译：我们通过测量塞贝克系数S和每平方电阻R_square来研究非晶态Sb和Cu界面处的物理和化学相互作用。固体界面是使用淬火技术在接近液态He温度的条件下原位制备的。我们已经观察到在Cu厚度<3 nm时Cu / Sb界面的厚度和S的温度依赖性。在此厚度范围内，当降低Cu覆盖率时，S的低温（<150 K）斜率S / T | _（T-> 0）增加。对于大于3nm的厚度，观察到相反的效果。在该区域中，S / T | _（T-> 0）随着Cu厚度的增加而增加，但Ss远小于厚度<3 nm的情况。考虑到三维Cu_xSb_（1-x）合金和多晶Cu膜的热功率，讨论了S / T | _（T-> 0）的这些依赖性。已经发现有证据表明，对于厚度小于3 nm的Cu，界面处的化学相互作用形成均匀的非晶态CuSb合金。

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