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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Vacuum ultraviolet excitation of the 2.7 eV emission band in neutron irradiated silica
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Vacuum ultraviolet excitation of the 2.7 eV emission band in neutron irradiated silica

机译：中子辐照二氧化硅中2.7 eV发射带的真空紫外激发

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摘要

The temperature dependence of the photoluminescence induced at 2.7 eV by ultraviolet (UV) and vacuum ultraviolet (VUV) excitation of neutron irradiated (10(21) n/m(2) and 10(22) n/m(2)) KU1 and KS-4V high purity silica, with different OH content, have been studied. Commercial silica Infrasil 301 has also been studied for comparison. At the highest neutron fluence and at the same temperature, the three irradiated silica grades show similar excitation spectra. Two close UV excitation bands, which show opposite temperature dependence, are observed at 4.8 and 5.1 eV. The 4.8 eV band, related to the triplet-singlet transition in SiODCs(II), decreases on decreasing temperature from 300 to 10 K and the band at 5.1 eV, probably related to SiODCs(I), is observed only at very low temperatures (similar to 10 K). An important VUV excitation structure, observed at low temperature. could also be related to SiODCs(I). A shift of the irradiated bands is detected at low temperature.
机译：紫外线（UV）和真空紫外线（VUV）激发的中子辐照（10（21）n / m（2）和10（22）n / m（2））KU1和2.7 eV诱导的光致发光的温度依赖性已经研究了具有不同OH含量的KS-4V高纯度二氧化硅。还对商业二氧化硅Infrasil 301进行了研究以进行比较。在最高中子注量和相同温度下，三种辐照二氧化硅等级显示出相似的激发光谱。在4.8和5.1 eV处观察到两个相反的紫外激发带，显示出相反的温度依赖性。与SiODCs（II）中的三重峰-单峰跃迁有关的4.8 eV谱带在温度从300降低到10 K时降低，仅在非常低的温度下才观察到5.1 eV的谱带，可能与SiODCs（I）有关（类似于10 K）。在低温下观察到的重要的VUV激发结构。也可能与SiODCs（I）有关。在低温下检测到辐照带的偏移。

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