1.54 mu m photoluminescence of Er-containing N-doped a-Si : H

Zanatta AR.; Nunes LAO.

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1.54 mu m photoluminescence of Er-containing N-doped a-Si : H

机译：含Er的N掺杂a-Si：H的1.54μm光致发光

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Nitrogen-doped hydrogenated amorphous SiEr (a-SiEr:H) films were deposited by co-sputtering from an Er partially covered Si target. Photoluminescence, infrared absorption and Raman spectroscopies were performed as a function of thermal annealing treatments and Er concentrations. As-deposited N-doped a-SiEr:H samples exhibit 1.54 mu m Er3+ photoluminescence at room temperature and reaches its maximum after cumulative thermal annealing at - 500 degrees C. in addition to the Er3+ light emission increase, thermal annealing induces the effusion of hydrogen and nitrogen bonded to silicon atoms. The experimental data indicate that both the hydrogen and nitrogen concentration improve the Er3+ light emission at 1.54 mu m by decreasing the rate of non-radiative processes. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 22]

机译：氮掺杂的氢化非晶SiEr（a-SiEr：H）膜是通过从部分覆盖的Er靶上共溅射而沉积的。进行光致发光，红外吸收和拉曼光谱作为热退火处理和man浓度的函数。沉积的N掺杂a-SiEr：H样品在室温下具有1.54μm的Er3 +光致发光，并且在-500摄氏度下累积热退火后达到最大值，除了Er3 +发光增加之外，热退火还会引起E3 +的渗出。氢和氮键合到硅原子上。实验数据表明，氢和氮的浓度均通过降低非辐射过程的速率而改善了1.54μm处Er3 +的发光。（C）1998 Elsevier Science B.V.保留所有权利。 [参考：22]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共5页
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Zanatta AR.; Nunes LAO.;
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正文语种 eng
中图分类晶体学;
关键词
Photoluminescence; A-sier : h; Co-sputtering; Molecular-beam epitaxy; Hydrogenated amorphous-silicon; Erbium; Luminescence; Spectra;

机译：光致发光;A级：h;共溅射;分子束外延;氢化非晶硅;E;发光;光谱;

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1. 1.54 mu m photoluminescence of Er-containing N-doped a-Si : H [J] . Zanatta AR., Nunes LAO. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：含Er的N掺杂a-Si：H的1.54μm光致发光
2. Doping effects on 1.54 μm photoluminescence from Er-containing ZnO [J] . Zhen Zhou, Toshitaka Komori, Tatsuya Ayukawa, Optical Materials . 2006,第6a7期

机译：掺杂含有含ER ZnO的1.54μm的光致发光的掺杂作用
3. Enhanced 1.54 μm photoluminescence from Er-containing ZnO through nitrogen doping [J] . Zhen Zhou, Toshitaka Komori, Masahito Yoshino, Applied Physics Letters . 2005,第4期

机译：通过氮掺杂增强含Er的ZnO的1.54μm光致发光
4. Effects of S-Doping and Subsequent Annealing on Photoluminescence around 1.54 mu m from Er-Containing ZnO [C] . Z. Zhou, N. Sato, T. Komaki Pacific Rim International Conference on Advanced Materials and Processing . 2005

机译：S型掺杂和随后退火对光致发光的影响含有含ER ZnO的1.54μm
5. Micro-Photoluminescence (mu-PL) Study of Core-Shell GaAs/GaAsSb Nanowires grown by Self-Assisted Molecular Beam Epitaxy [D] . Sami, Md Shifat Us. 2015

机译：通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光（MU-PL）研究
6. Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films [O] . Ranran Fan, Fei Lu, Kaikai Li 2017

机译：Ge纳米晶体对Er2O3：ZnO和Ge共溅射膜中1.54μm光致发光增强的影响
7. Effects of Nitrogen Irradiation on Photoluminescence around 1.54 mu;m from Er-containing ZnO [O] . Zhen Zhou, Takanao Komaki, Toshitaka Komori, 2004

机译：氮辐射对含ER ZnO约1.54μm的光致发光的影响
8. Exciton Absorption, Photoluminescence and Band Structure of N-Free and N-Doped In(1-x)Ga(x)P. [R] . Nelson, R. J., Holonyak, N. 1975

机译：N-Free和N-Inped In（1-x）Ga（x）p的激子吸收，光致发光和能带结构。

1.54 mu m photoluminescence of Er-containing N-doped a-Si : H

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