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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Dielectric relaxation processes in stoichiometric Ge:Sb:Te amorphous films
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Dielectric relaxation processes in stoichiometric Ge:Sb:Te amorphous films

机译：化学计量的Ge：Sb：Te非晶薄膜中的介电弛豫过程

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摘要

The aim of this work is to investigate the relaxation processes of amorphous thin films by dielectric spectroscopy in films with stoichiometric compositions Ge_1Sb_4Te_7, Ge_1Sb _2Te_4 and Ge_2Sb_2Te_5. Experimental results fit well to an empiric Havriliak-Negami model. Two relaxation processes have been observed in all materials: an alpha relaxation in the low frequency range (0.1-10 kHz) and a secondary beta relaxation in the high frequency range (100 kHz-10 MHz). The temperature dependence of the relaxation time for the alpha relaxations is described by the Vogel-Fulcher-Tammann relation with Vogel temperature increasing from 280 K for Ge_1Sb_4Te_7 to 291 K for Ge_2Sb _2Te_(5.) The secondary beta or Johari-Goldstein relaxation observed in the high frequency range has an Arrhenius-type dependence and approximately the same activation energy 0.422 ± 0.009 eV for all studied Ge:Sb:Te films. A plausible explanation for relaxation processes observed in Ge:Sb:Te films can be related to cooperative and local rearrangements of molecules or clusters of GeTe and/or Sb_2Te_(3.)
机译：这项工作的目的是通过介电光谱研究化学计量组成为Ge_1Sb_4Te_7，Ge_1Sb _2Te_4和Ge_2Sb_2Te_5的薄膜中非晶薄膜的弛豫过程。实验结果非常适合经验Havriliak-Negami模型。在所有材料中均观察到两个弛豫过程：低频范围（0.1-10 kHz）中的α弛豫和高频范围（100 kHz-10 MHz）中的第二β弛豫。阿尔法弛豫时间与弛豫时间的温度相关性由Vogel-Fulcher-Tammann关系描述，Vogel温度从Ge_1Sb_4Te_7的280 K增加到Ge_2Sb _2Te_（5）的291K。在2005年观察到二次β或Johari-Goldstein弛豫对于所有研究的Ge：Sb：Te薄膜，高频范围具有Arrhenius型依赖性，并且具有几乎相同的活化能0.422±0.009 eV。 Ge：Sb：Te薄膜中观察到的弛豫过程的合理解释可能与GeTe和/或Sb_2Te_（3。）的分子或簇的合作和局部重排有关。

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