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The near- and mid-infrared emission properties of Tm~(3+)-doped GeGaS-CsI chalcogenide glasses

机译:Tm〜(3+)掺杂GeGaS-CsI硫族化物玻璃的近红外和中红外发射特性

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摘要

Serials of chalcogenide glasses based on composition of 72GeS _2-18Ga_2S_3-10CsI (in mol%) and doped with high Tm~(3+) content (up to 10,000 ppm) were prepared, and their luminescence properties were investigated under excitation with 800 nm laser. The influences of doping concentration on Judd-Ofelt intensity parameter Ω_i, spontaneous transition probability A, fluorescence branching ratio β, and radiative lifetime τ_(rad) of Tm~(3+) in the samples were studied. Four infrared emission bands observed were centered at 1.48, 1.8, 2.3, and 3.8 μm, corresponding to optical transitions ~3H_4 → ~3F_4, ~3F_4 → ~3H_6, ~3H_4 → ~3H _5 and ~3H_5 → ~3F_4, respectively. For 1.0 wt.% Tm~(3+): doped sample, no concentration quenching was observed and its emission cross-sections at 2.3 and 3.8 μm calculated by using Füchtbauer-Ladenburg equation were 6.85 × 10 ~(-21) and 7.66 × 10~(-21) cm ~(-2), respectively.
机译:制备了基于72GeS _2-18Ga_2S_3-10CsI(摩尔%)和掺杂高Tm〜(3+)含量(最高10,000 ppm)的硫属化物玻璃,并在800 nm激发下研究了其发光性能激光。研究了掺杂浓度对样品中Tm〜(3+)的Judd-Ofelt强度参数Ω_i,自发转变概率A,荧光分支比β和辐射寿命τ_(rad)的影响。观察到的四个红外发射带分别位于1.48、1.8、2.3和3.8μm的中心,分别对应于〜3H_4→〜3F_4,〜3F_4→〜3H_6,〜3H_4→〜3H _5和〜3H_5→〜3F_4的光学跃迁。对于1.0 wt。%Tm〜(3+):掺杂的样品,未观察到浓度猝灭,并且使用Füchtbauer-Ladenburg方程计算的其在2.3和3.8μm处的发射截面为6.85×10〜(-21)和7.66×分别为10〜(-21)cm〜(-2)。

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